IXTA130N15X4-7
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IXYS IXTA130N15X4-7

Manufacturer No:
IXTA130N15X4-7
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXTA130N15X4-7 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 150V 130A TO263-7
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):150 V
Current - Continuous Drain (Id) @ 25°C:130A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:8mOhm @ 65A, 10V
Vgs(th) (Max) @ Id:4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:87 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4770 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):400W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-263-7 (IXTA)
Package / Case:TO-263-7, D²Pak (6 Leads + Tab)
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Similar Products

Part Number IXTA130N15X4-7 IXTA150N15X4-7  
Manufacturer IXYS IXYS
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150 V 150 V
Current - Continuous Drain (Id) @ 25°C 130A (Tc) 150A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 8mOhm @ 65A, 10V 6.9mOhm @ 75A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 87 nC @ 10 V 105 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 4770 pF @ 25 V 5500 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 400W (Tc) 480W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package TO-263-7 (IXTA) TO-263-7 (IXTA)
Package / Case TO-263-7, D²Pak (6 Leads + Tab) TO-263-7, D²Pak (6 Leads + Tab)

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