IXTA110N055P
  • Share:

IXYS IXTA110N055P

Manufacturer No:
IXTA110N055P
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXTA110N055P Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 55V 110A TO263
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):55 V
Current - Continuous Drain (Id) @ 25°C:110A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:13.5mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id:5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:76 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2210 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):390W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-263AA
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
0 Remaining View Similar

In Stock

-
186

Please send RFQ , we will respond immediately.

Similar Products

Part Number IXTA110N055P IXTA110N055T  
Manufacturer IXYS IXYS
Product Status Active Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V 55 V
Current - Continuous Drain (Id) @ 25°C 110A (Tc) 110A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 13.5mOhm @ 500mA, 10V 7mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 5.5V @ 250µA 4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 76 nC @ 10 V 67 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2210 pF @ 25 V 3080 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 390W (Tc) 230W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package TO-263AA TO-263AA
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Related Product By Categories

TK14A65W,S5X
TK14A65W,S5X
Toshiba Semiconductor and Storage
MOSFET N-CH 650V 13.7A TO220SIS
SQR40020ER_GE3
SQR40020ER_GE3
Vishay Siliconix
MOSFET N-CH 40V 100A TO252 REV
RJK0346DPA-01#J0B
RJK0346DPA-01#J0B
Renesas Electronics America Inc
MOSFET N-CH 30V 65A 8WPAK
SIR5102DP-T1-RE3
SIR5102DP-T1-RE3
Vishay Siliconix
N-CHANNEL 100 V (D-S) MOSFET POW
DMN6040SFDEQ-7
DMN6040SFDEQ-7
Diodes Incorporated
MOSFET N-CH 60V 5.3A 6UDFN
FDMS0310AS
FDMS0310AS
onsemi
MOSFET N-CH 30V 19A/22A 8PQFN
AOW360A70
AOW360A70
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 700V 12A TO262
IXTA64N10L2
IXTA64N10L2
IXYS
MOSFET N-CH 100V 64A TO263AA
P3M12160K4
P3M12160K4
PN Junction Semiconductor
SICFET N-CH 1200V 19A TO-247-4
AUIRFB4610
AUIRFB4610
Infineon Technologies
MOSFET N-CH 100V 73A TO220AB
AUIRLR3915TRL
AUIRLR3915TRL
Infineon Technologies
MOSFET N-CH 55V 30A DPAK
AO6405_102
AO6405_102
Alpha & Omega Semiconductor Inc.
MOSFET P-CH 30V 5A 6TSOP

Related Product By Brand

DSSK50-0025B
DSSK50-0025B
IXYS
DIODE ARRAY SCHOTTKY 25V TO247AD
DMA10P1600PZ-TUB
DMA10P1600PZ-TUB
IXYS
POWER DIODE DISCRETES-RECTIFIER
IXKH35N60C5
IXKH35N60C5
IXYS
MOSFET N-CH 600V 35A TO247AD
IXFA90N20X3
IXFA90N20X3
IXYS
MOSFET N-CH 200V 90A TO263AA
IXTQ16N50P
IXTQ16N50P
IXYS
MOSFET N-CH 500V 16A TO3P
IXFH120N20P
IXFH120N20P
IXYS
MOSFET N-CH 200V 120A TO247AD
IXFH18N65X2
IXFH18N65X2
IXYS
MOSFET N-CH 650V 18A TO247
IXFT13N80Q
IXFT13N80Q
IXYS
MOSFET N-CH 800V 13A TO268
IXGH32N60BU1
IXGH32N60BU1
IXYS
IGBT 600V 60A 200W TO247AD
IXGH31N60
IXGH31N60
IXYS
IGBT 600V 60A 150W TO247AD
IXSH24N60BD1
IXSH24N60BD1
IXYS
IGBT 600V 48A 150W TO247
IXGP30N60B4D1
IXGP30N60B4D1
IXYS
IGBT 600V 56A 190W TO220