IXTA10N60P
  • Share:

IXYS IXTA10N60P

Manufacturer No:
IXTA10N60P
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXTA10N60P Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 600V 10A TO263
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:10A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:740mOhm @ 5A, 10V
Vgs(th) (Max) @ Id:5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:32 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1610 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):200W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-263AA
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
0 Remaining View Similar

In Stock

$4.06
167

Please send RFQ , we will respond immediately.

Similar Products

Part Number IXTA10N60P IXTA14N60P  
Manufacturer IXYS IXYS
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 10A (Tc) 14A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 740mOhm @ 5A, 10V 550mOhm @ 7A, 10V
Vgs(th) (Max) @ Id 5.5V @ 250µA 5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 32 nC @ 10 V 36 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 1610 pF @ 25 V 2500 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 200W (Tc) 300W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package TO-263AA TO-263AA
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Related Product By Categories

FQI17P10TU
FQI17P10TU
Fairchild Semiconductor
P-CHANNEL POWER MOSFET
SIR681DP-T1-RE3
SIR681DP-T1-RE3
Vishay Siliconix
MOSFET P-CH 80V 17.6A/71.9A PPAK
IPD50N03S2L06ATMA1
IPD50N03S2L06ATMA1
Infineon Technologies
MOSFET N-CH 30V 50A TO252-31
SIHB065N60E-GE3
SIHB065N60E-GE3
Vishay Siliconix
MOSFET N-CH 600V 40A D2PAK
DMP2305UQ-7
DMP2305UQ-7
Diodes Incorporated
MOSFET BVDSS: 8V~24V SOT23 T&R 3
TW140N120C,S1F
TW140N120C,S1F
Toshiba Semiconductor and Storage
G3 1200V SIC-MOSFET TO-247 140M
IXTT110N10L2
IXTT110N10L2
IXYS
MOSFET N-CH 100V 110A TO268
MMFTN3404A
MMFTN3404A
Diotec Semiconductor
MOSFET 30V 5.6A N 1.25W
IRFP450
IRFP450
Vishay Siliconix
MOSFET N-CH 500V 14A TO247-3
SI6473DQ-T1-GE3
SI6473DQ-T1-GE3
Vishay Siliconix
MOSFET P-CH 20V 6.2A 8TSSOP
AO4423
AO4423
Alpha & Omega Semiconductor Inc.
MOSFET P-CH 30V 17A 8SOIC
AON7436
AON7436
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 20V 9A/23A 8DFN

Related Product By Brand

DNA30E2200PZ-TRL
DNA30E2200PZ-TRL
IXYS
DIODE GEN PURP 2.2KV 30A TO263
MCD44-14IO8B
MCD44-14IO8B
IXYS
MOD THYRISTOR DUAL 1400V TO240AA
CLA40E1200NPZ-TRL
CLA40E1200NPZ-TRL
IXYS
SCR 1.2KV 63A TO263
IXFH12N90P
IXFH12N90P
IXYS
MOSFET N-CH 900V 12A TO247AD
IXFN300N10P
IXFN300N10P
IXYS
MOSFET N-CH 100V 295A SOT227B
IXTK150N15P
IXTK150N15P
IXYS
MOSFET N-CH 150V 150A TO264
IXTA2N100P-TRL
IXTA2N100P-TRL
IXYS
MOSFET N-CH 1000V 2A TO263
IXTA100N04T2
IXTA100N04T2
IXYS
MOSFET N-CH 40V 100A TO263
IXFH12N120P
IXFH12N120P
IXYS
MOSFET N-CH 1200V 12A TO247AD
IXFT32N50Q
IXFT32N50Q
IXYS
MOSFET N-CH 500V 32A TO268
IXGN80N60A2D1
IXGN80N60A2D1
IXYS
IGBT MOD 600V 160A 625W SOT227B
IXGH20N60B
IXGH20N60B
IXYS
IGBT 600V 40A 150W TO247AD