IXTA10N60P
  • Share:

IXYS IXTA10N60P

Manufacturer No:
IXTA10N60P
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXTA10N60P Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 600V 10A TO263
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:10A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:740mOhm @ 5A, 10V
Vgs(th) (Max) @ Id:5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:32 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1610 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):200W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-263AA
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
0 Remaining View Similar

In Stock

$4.06
167

Please send RFQ , we will respond immediately.

Similar Products

Part Number IXTA10N60P IXTA14N60P  
Manufacturer IXYS IXYS
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 10A (Tc) 14A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 740mOhm @ 5A, 10V 550mOhm @ 7A, 10V
Vgs(th) (Max) @ Id 5.5V @ 250µA 5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 32 nC @ 10 V 36 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 1610 pF @ 25 V 2500 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 200W (Tc) 300W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package TO-263AA TO-263AA
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Related Product By Categories

FDPF5N50NZF
FDPF5N50NZF
Fairchild Semiconductor
MOSFET N-CH 500V 4.2A TO220F
AUIRFR8403
AUIRFR8403
Infineon Technologies
MOSFET N-CH 40V 100A DPAK
2N7002NXAKR
2N7002NXAKR
Nexperia USA Inc.
MOSFET N-CH 60V 190MA TO236AB
PJD35N06A-AU_L2_000A1
PJD35N06A-AU_L2_000A1
Panjit International Inc.
60V N-CHANNEL ENHANCEMENT MODE M
CSD16415Q5
CSD16415Q5
Texas Instruments
MOSFET N-CH 25V 100A 8VSON
BUK7Y18-55B,115
BUK7Y18-55B,115
Nexperia USA Inc.
MOSFET N-CH 55V 47.4A LFPAK56
TSM70N1R4CH C5G
TSM70N1R4CH C5G
Taiwan Semiconductor Corporation
MOSFET N-CH 700V 3.3A TO251
C3M0032120J1
C3M0032120J1
Wolfspeed, Inc.
1200V 32MOHM SIC MOSFET
MTP50P03HDL
MTP50P03HDL
onsemi
MOSFET P-CH 30V 50A TO220AB
BSP320S E6433
BSP320S E6433
Infineon Technologies
MOSFET N-CH 60V 2.9A SOT223-4
IPSH6N03LB G
IPSH6N03LB G
Infineon Technologies
MOSFET N-CH 30V 50A TO251-3
SUM40N10-30-E3
SUM40N10-30-E3
Vishay Siliconix
MOSFET N-CH 100V 40A TO263

Related Product By Brand

DSS2X160-01A
DSS2X160-01A
IXYS
DIODE MODULE 100V 160A SOT227B
DH60-16A
DH60-16A
IXYS
DIODE GEN PURP 1.6KV 60A TO247AD
IXTP20N65X2
IXTP20N65X2
IXYS
MOSFET N-CH 650V 20A TO220AB
IXFA36N20X3
IXFA36N20X3
IXYS
MOSFET N-CH 200V 36A TO263AA
IXTA1N200P3HV
IXTA1N200P3HV
IXYS
MOSFET N-CH 2000V 1A TO263
IXFN82N60P
IXFN82N60P
IXYS
MOSFET N-CH 600V 72A SOT-227B
IXTA182N055T7
IXTA182N055T7
IXYS
MOSFET N-CH 55V 182A TO263-7
IXTK250N10
IXTK250N10
IXYS
MOSFET N-CH 100V 250A TO264
IXFK44N50Q
IXFK44N50Q
IXYS
MOSFET N-CH 500V 44A TO264AA
IXYA20N120C3HV
IXYA20N120C3HV
IXYS
IGBT
IXGH32N60C
IXGH32N60C
IXYS
IGBT 600V 60A 200W TO247AD
IXCP40M45A
IXCP40M45A
IXYS
IC CURRENT REGULATOR TO220AB