IXTA08N120P
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IXYS IXTA08N120P

Manufacturer No:
IXTA08N120P
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXTA08N120P Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 1200V 800MA TO263
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):1200 V
Current - Continuous Drain (Id) @ 25°C:800mA (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:25Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs:14 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:333 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):50W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-263AA
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Similar Products

Part Number IXTA08N120P IXTA06N120P   IXTA08N100P  
Manufacturer IXYS IXYS IXYS
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1200 V 1200 V 1000 V
Current - Continuous Drain (Id) @ 25°C 800mA (Tc) 600mA (Tc) 800mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 25Ohm @ 500mA, 10V 32Ohm @ 300mA, 10V 20Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 4.5V @ 50µA 4.5V @ 50µA 4V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 14 nC @ 10 V 13.3 nC @ 10 V 11.3 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 333 pF @ 25 V 270 pF @ 25 V 240 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 50W (Tc) 42W (Tc) 42W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package TO-263AA TO-263AA TO-263AA
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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