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IXT-1-1N100S1
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IXYS IXT-1-1N100S1

Manufacturer No:
IXT-1-1N100S1
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXT-1-1N100S1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 1000V 1.5A 8-SOIC
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):1000 V
Current - Continuous Drain (Id) @ 25°C:1.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:- 
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:- 
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:- 
Supplier Device Package:- 
Package / Case:- 
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In Stock

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