IXSX40N60BD1
  • Share:

IXYS IXSX40N60BD1

Manufacturer No:
IXSX40N60BD1
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXSX40N60BD1 Datasheet
ECAD Model:
-
Description:
IGBT 600V 75A 280W PLUS247
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

IGBT Type:- 
Voltage - Collector Emitter Breakdown (Max):600 V
Current - Collector (Ic) (Max):75 A
Current - Collector Pulsed (Icm):150 A
Vce(on) (Max) @ Vge, Ic:2.2V @ 15V, 40A
Power - Max:280 W
Switching Energy:1.8mJ (off)
Input Type:Standard
Gate Charge:190 nC
Td (on/off) @ 25°C:50ns/110ns
Test Condition:480V, 40A, 2.7Ohm, 15V
Reverse Recovery Time (trr):35 ns
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-247-3 Variant
Supplier Device Package:PLUS247™-3
0 Remaining View Similar

In Stock

-
467

Please send RFQ , we will respond immediately.

Similar Products

Part Number IXSX40N60BD1 IXSX40N60CD1   IXSX50N60BD1   IXGX40N60BD1   IXSK40N60BD1   IXSR40N60BD1  
Manufacturer IXYS IXYS IXYS IXYS IXYS IXYS
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
IGBT Type - - - - - PT
Voltage - Collector Emitter Breakdown (Max) 600 V 600 V 600 V 600 V 600 V 600 V
Current - Collector (Ic) (Max) 75 A 75 A 75 A 75 A 75 A 70 A
Current - Collector Pulsed (Icm) 150 A 150 A 200 A 150 A 150 A 150 A
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 40A 2.5V @ 15V, 40A 2.5V @ 15V, 50A 2.1V @ 15V, 40A 2.2V @ 15V, 40A 2.2V @ 15V, 40A
Power - Max 280 W 280 W 300 W 250 W 280 W 170 W
Switching Energy 1.8mJ (off) 1mJ (off) 3.3mJ (off) 2.7mJ (off) 1.8mJ (off) 1.8mJ (off)
Input Type Standard Standard Standard Standard Standard Standard
Gate Charge 190 nC 190 nC 167 nC 116 nC 190 nC 190 nC
Td (on/off) @ 25°C 50ns/110ns 50ns/70ns 70ns/150ns 25ns/180ns 50ns/110ns 50ns/110ns
Test Condition 480V, 40A, 2.7Ohm, 15V 480V, 40A, 2.7Ohm, 15V 480V, 50A, 2.7Ohm, 15V 480V, 40A, 4.7Ohm, 15V 480V, 40A, 2.7Ohm, 15V 480V, 40A, 2.7Ohm, 15V
Reverse Recovery Time (trr) 35 ns 35 ns 35 ns 35 ns 35 ns 35 ns
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-247-3 Variant TO-247-3 Variant TO-247-3 Variant TO-247-3 Variant TO-264-3, TO-264AA TO-247-3
Supplier Device Package PLUS247™-3 PLUS247™-3 PLUS247™-3 PLUS247™-3 TO-264AA(IXSK) ISOPLUS247™

Related Product By Categories

FGA20S120M
FGA20S120M
Fairchild Semiconductor
IGBT, 40A, 1200V, N-CHANNEL
FGH40T65SHD-F155
FGH40T65SHD-F155
Fairchild Semiconductor
IGBT, 80A, 650V, N-CHANNEL, TO-2
NTE3310
NTE3310
NTE Electronics, Inc
IGBT-N-CHAN ENHANCEMENT
APT70GR65B
APT70GR65B
Microchip Technology
IGBT 650V 134A 595W TO-247
IXBH6N170
IXBH6N170
IXYS
IGBT 1700V 12A 75W TO247AD
AOT20B65M1
AOT20B65M1
Alpha & Omega Semiconductor Inc.
IGBT 650V 20A TO220
IXYK100N65B3D1
IXYK100N65B3D1
IXYS
IGBT
IRG4PH20K
IRG4PH20K
Infineon Technologies
IGBT 1200V 11A 60W TO247AC
IXGH30N60C2D1
IXGH30N60C2D1
IXYS
IGBT 600V 70A 190W TO247
IXGT30N120BD1
IXGT30N120BD1
IXYS
IGBT 1200V TO268
NGB8202NT4G
NGB8202NT4G
onsemi
IGBT 440V 20A 150W D2PAK
RJH60D0DPM-00#T1
RJH60D0DPM-00#T1
Renesas Electronics America Inc
IGBT 600V 45A 40W TO3PFM

Related Product By Brand

DPF240X200NA
DPF240X200NA
IXYS
DIODE ARRAY 200V 120A SOT227B
DSI45-08A
DSI45-08A
IXYS
DIODE GEN PURP 800V 45A TO247AD
DPG60I300HA
DPG60I300HA
IXYS
DIODE GEN PURP 300V 60A TO247
VVZ40-16IO1
VVZ40-16IO1
IXYS
RECT BRIDGE 3PH 34A 1600V KAMM
IXTA460P2
IXTA460P2
IXYS
MOSFET N-CH 500V 24A TO263
IXFN360N10T
IXFN360N10T
IXYS
MOSFET N-CH 100V 360A SOT-227B
IXTP120P065T
IXTP120P065T
IXYS
MOSFET P-CH 65V 120A TO220AB
IXFE36N100
IXFE36N100
IXYS
MOSFET N-CH 1000V 33A SOT227B
IXTQ130N15T
IXTQ130N15T
IXYS
MOSFET N-CH 150V 130A TO3P
IXYX100N120C3
IXYX100N120C3
IXYS
IGBT 1200V 188A 1150W PLUS247
IXSR35N120BD1
IXSR35N120BD1
IXYS
IGBT 1200V 70A 250W ISOPLUS247
IXGT28N60B
IXGT28N60B
IXYS
IGBT 600V 40A 150W TO268