IXST40N60B
  • Share:

IXYS IXST40N60B

Manufacturer No:
IXST40N60B
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXST40N60B Datasheet
ECAD Model:
-
Description:
IGBT 600V 75A 280W TO268
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

IGBT Type:PT
Voltage - Collector Emitter Breakdown (Max):600 V
Current - Collector (Ic) (Max):75 A
Current - Collector Pulsed (Icm):150 A
Vce(on) (Max) @ Vge, Ic:2.2V @ 15V, 40A
Power - Max:280 W
Switching Energy:1.8mJ (off)
Input Type:Standard
Gate Charge:190 nC
Td (on/off) @ 25°C:50ns/110ns
Test Condition:480V, 40A, 2.7Ohm, 15V
Reverse Recovery Time (trr):- 
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Supplier Device Package:TO-268AA
0 Remaining View Similar

In Stock

-
596

Please send RFQ , we will respond immediately.

Similar Products

Part Number IXST40N60B IXSH40N60B   IXST30N60B  
Manufacturer IXYS IXYS IXYS
Product Status Obsolete Obsolete Obsolete
IGBT Type PT PT PT
Voltage - Collector Emitter Breakdown (Max) 600 V 600 V 600 V
Current - Collector (Ic) (Max) 75 A 75 A 55 A
Current - Collector Pulsed (Icm) 150 A 150 A 110 A
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 40A 2.2V @ 15V, 40A 2V @ 15V, 30A
Power - Max 280 W 280 W 200 W
Switching Energy 1.8mJ (off) 1.8mJ (off) 1.5mJ (off)
Input Type Standard Standard Standard
Gate Charge 190 nC 190 nC 100 nC
Td (on/off) @ 25°C 50ns/110ns 50ns/110ns 30ns/150ns
Test Condition 480V, 40A, 2.7Ohm, 15V 480V, 40A, 2.7Ohm, 15V 480V, 30A, 4.7Ohm, 15V
Reverse Recovery Time (trr) - - -
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Through Hole Surface Mount
Package / Case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA TO-247-3 TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Supplier Device Package TO-268AA TO-247AD TO-268AA

Related Product By Categories

RJP6065DPM-00#T1
RJP6065DPM-00#T1
Renesas Electronics America Inc
IGBT
STGW30NC120HD
STGW30NC120HD
STMicroelectronics
IGBT 1200V 60A 220W TO247
AIKW75N60CTXKSA1
AIKW75N60CTXKSA1
Infineon Technologies
IC DISCRETE 600V TO247-3
SGW15N120
SGW15N120
Infineon Technologies
IGBT, 30A, 1200V, N-CHANNEL
IXYY8N90C3
IXYY8N90C3
IXYS
IGBT 900V 20A 125W C3 TO-252
IXGH16N170A
IXGH16N170A
IXYS
IGBT 1700V 16A 190W TO247
IKW30N60T
IKW30N60T
Infineon Technologies
IKW30N60 - DISCRETE IGBT WITH AN
ISL9V3036S3S
ISL9V3036S3S
onsemi
IGBT 360V 21A 150W TO263AB
IXGH28N120BD1
IXGH28N120BD1
IXYS
IGBT 1200V 50A 250W TO247
GT8G133(TE12L,Q)
GT8G133(TE12L,Q)
Toshiba Semiconductor and Storage
IGBT 400V 600MW 8TSSOP
IXGH64N60A3
IXGH64N60A3
IXYS
IGBT 600V 460W TO247
IRG7PH35UD1MPBF
IRG7PH35UD1MPBF
Infineon Technologies
IGBT 1200V 50A 179W TO247AD

Related Product By Brand

VUO160-08NO7
VUO160-08NO7
IXYS
BRIDGE RECT 3P 800V 175A PWS-E1
E1780TG65E
E1780TG65E
IXYS
DIODE GEN PURP 3.6KV 1780A -
MCD72-16IO8B
MCD72-16IO8B
IXYS
MOD THYRISTOR/DIO 1600V TO-240AA
IXFH170N25X3
IXFH170N25X3
IXYS
MOSFET N-CH 250V 170A TO247
IXFB132N50P3
IXFB132N50P3
IXYS
MOSFET N-CH 500V 132A PLUS264
IXFN44N80P
IXFN44N80P
IXYS
MOSFET N-CH 800V 39A SOT-227B
IXTH3N120
IXTH3N120
IXYS
MOSFET N-CH 1200V 3A TO247
IXFR26N50Q
IXFR26N50Q
IXYS
MOSFET N-CH 500V 24A ISOPLUS247
IXFR90N20Q
IXFR90N20Q
IXYS
MOSFET N-CH 200V ISOPLUS247
IXTP220N075T
IXTP220N075T
IXYS
MOSFET N-CH 75V 220A TO220AB
IXTT16P20
IXTT16P20
IXYS
MOSFET P-CH 200V 16A TO268
IXSX50N60AU1
IXSX50N60AU1
IXYS
IGBT 600V 75A 300W PLUS247