IXSR35N120BD1
  • Share:

IXYS IXSR35N120BD1

Manufacturer No:
IXSR35N120BD1
Manufacturer:
IXYS
Package:
Bulk
Datasheet:
IXSR35N120BD1 Datasheet
ECAD Model:
-
Description:
IGBT 1200V 70A 250W ISOPLUS247
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

IGBT Type:PT
Voltage - Collector Emitter Breakdown (Max):1200 V
Current - Collector (Ic) (Max):70 A
Current - Collector Pulsed (Icm):140 A
Vce(on) (Max) @ Vge, Ic:3.6V @ 15V, 35A
Power - Max:250 W
Switching Energy:5mJ (off)
Input Type:Standard
Gate Charge:120 nC
Td (on/off) @ 25°C:36ns/160ns
Test Condition:960V, 35A, 2.7Ohm, 15V
Reverse Recovery Time (trr):40 ns
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-247-3
Supplier Device Package:ISOPLUS247™
0 Remaining View Similar

In Stock

-
194

Please send RFQ , we will respond immediately.

Similar Products

Part Number IXSR35N120BD1 IXSX35N120BD1   IXSK35N120BD1  
Manufacturer IXYS IXYS IXYS
Product Status Obsolete Obsolete Obsolete
IGBT Type PT PT PT
Voltage - Collector Emitter Breakdown (Max) 1200 V 1200 V 1200 V
Current - Collector (Ic) (Max) 70 A 70 A 70 A
Current - Collector Pulsed (Icm) 140 A 140 A 140 A
Vce(on) (Max) @ Vge, Ic 3.6V @ 15V, 35A 3.6V @ 15V, 35A 3.6V @ 15V, 35A
Power - Max 250 W 300 W 300 W
Switching Energy 5mJ (off) 5mJ (off) 5mJ (off)
Input Type Standard Standard Standard
Gate Charge 120 nC 120 nC 120 nC
Td (on/off) @ 25°C 36ns/160ns 36ns/160ns 36ns/160ns
Test Condition 960V, 35A, 2.7Ohm, 15V 960V, 35A, 5Ohm, 15V 960V, 35A, 5Ohm, 15V
Reverse Recovery Time (trr) 40 ns 40 ns 40 ns
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Package / Case TO-247-3 TO-247-3 Variant TO-264-3, TO-264AA
Supplier Device Package ISOPLUS247™ PLUS247™-3 TO-264AA(IXSK)

Related Product By Categories

STGWT60H65FB
STGWT60H65FB
STMicroelectronics
IGBT 650V 80A 375W TO3P-3L
IXYA20N65C3D1
IXYA20N65C3D1
IXYS
IGBT
AIKP20N60CTAKSA1
AIKP20N60CTAKSA1
Infineon Technologies
IC DISCRETE 600V TO220-3
NGTB45N60SWG
NGTB45N60SWG
onsemi
IGBT 600V 45A TO-247
APT54GA60BD30
APT54GA60BD30
Microchip Technology
IGBT 600V 96A 416W TO247
IXYR50N120C3D1
IXYR50N120C3D1
IXYS
IGBT 1200V 56A 290W ISOPLUS247
IRG4BC30SPBF
IRG4BC30SPBF
Infineon Technologies
IGBT 600V 34A 100W TO220AB
HGTP12N60C3
HGTP12N60C3
onsemi
IGBT 600V 24A 104W TO220AB
IXST15N120B
IXST15N120B
IXYS
IGBT 1200V 30A 150W TO268
IXGX40N60BD1
IXGX40N60BD1
IXYS
IGBT 600V 75A 250W PLUS247
IHW20N135R3FKSA1
IHW20N135R3FKSA1
Infineon Technologies
IGBT 1350V 20A 310W TO247-3
SIGC156T60NR2CX1SA4
SIGC156T60NR2CX1SA4
Infineon Technologies
IGBT 3 CHIP 600V WAFER

Related Product By Brand

DSEE8-08CC
DSEE8-08CC
IXYS
DIODE ARRAY 800V 10A ISOPLUS220
DSEP40-03AS-TRL
DSEP40-03AS-TRL
IXYS
DIODE GEN PURP 300V 40A TO263
IXTP450P2
IXTP450P2
IXYS
MOSFET N-CH 500V 16A TO220AB
IXFN520N075T2
IXFN520N075T2
IXYS
MOSFET N-CH 75V 480A SOT227B
IXFH170N25X3
IXFH170N25X3
IXYS
MOSFET N-CH 250V 170A TO247
IXTT100N25P
IXTT100N25P
IXYS
MOSFET N-CH 250V 100A TO268
IXFY4N85X
IXFY4N85X
IXYS
MOSFET N-CH 850V 3.5A TO252
IXFA24N60X
IXFA24N60X
IXYS
MOSFET N-CH 600V 24A TO263AA
IXFH24N60X
IXFH24N60X
IXYS
MOSFET N-CH 600V 24A TO247-3
IXTA02N250HV-TRL
IXTA02N250HV-TRL
IXYS
MOSFET N-CH 2500V 200MA TO263HV
IXTP2N80P
IXTP2N80P
IXYS
MOSFET N-CH 800V 2A TO220AB
IXGR32N170H1
IXGR32N170H1
IXYS
IGBT 1700V 38A 200W ISOPLUS247