IXSK40N60CD1
  • Share:

IXYS IXSK40N60CD1

Manufacturer No:
IXSK40N60CD1
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXSK40N60CD1 Datasheet
ECAD Model:
-
Description:
IGBT 600V 75A 280W TO264
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

IGBT Type:- 
Voltage - Collector Emitter Breakdown (Max):600 V
Current - Collector (Ic) (Max):75 A
Current - Collector Pulsed (Icm):150 A
Vce(on) (Max) @ Vge, Ic:2.5V @ 15V, 40A
Power - Max:280 W
Switching Energy:1mJ (off)
Input Type:Standard
Gate Charge:190 nC
Td (on/off) @ 25°C:50ns/70ns
Test Condition:480V, 40A, 2.7Ohm, 15V
Reverse Recovery Time (trr):35 ns
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-264-3, TO-264AA
Supplier Device Package:TO-264AA(IXSK)
0 Remaining View Similar

In Stock

-
321

Please send RFQ , we will respond immediately.

Similar Products

Part Number IXSK40N60CD1 IXSR40N60CD1   IXSX40N60CD1   IXSK30N60CD1   IXSK40N60BD1  
Manufacturer IXYS IXYS IXYS IXYS IXYS
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete
IGBT Type - PT - - -
Voltage - Collector Emitter Breakdown (Max) 600 V 600 V 600 V 600 V 600 V
Current - Collector (Ic) (Max) 75 A 62 A 75 A 55 A 75 A
Current - Collector Pulsed (Icm) 150 A 150 A 150 A 110 A 150 A
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 40A 2.5V @ 15V, 40A 2.5V @ 15V, 40A 2.5V @ 15V, 30A 2.2V @ 15V, 40A
Power - Max 280 W 210 W 280 W 200 W 280 W
Switching Energy 1mJ (off) 1mJ (off) 1mJ (off) 700µJ (off) 1.8mJ (off)
Input Type Standard Standard Standard Standard Standard
Gate Charge 190 nC 190 nC 190 nC 100 nC 190 nC
Td (on/off) @ 25°C 50ns/70ns 50ns/70ns 50ns/70ns 30ns/90ns 50ns/110ns
Test Condition 480V, 40A, 2.7Ohm, 15V 480V, 40A, 2.7Ohm, 15V 480V, 40A, 2.7Ohm, 15V 480V, 30A, 4.7Ohm, 15V 480V, 40A, 2.7Ohm, 15V
Reverse Recovery Time (trr) 35 ns 35 ns 35 ns 50 ns 35 ns
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-264-3, TO-264AA TO-247-3 TO-247-3 Variant TO-264-3, TO-264AA TO-264-3, TO-264AA
Supplier Device Package TO-264AA(IXSK) ISOPLUS247™ PLUS247™-3 TO-264AA(IXSK) TO-264AA(IXSK)

Related Product By Categories

FGA25S125P
FGA25S125P
Fairchild Semiconductor
IGBT, 50A, 1250V, N-CHANNEL
IKZA50N65SS5XKSA1
IKZA50N65SS5XKSA1
Infineon Technologies
INDUSTRY 14
ISL9V2040S3ST
ISL9V2040S3ST
Fairchild Semiconductor
INSULATED GATE BIPOLAR TRANSISTO
STGB20V60DF
STGB20V60DF
STMicroelectronics
IGBT 600V 40A 167W D2PAK
NGTB50N65FL2WG
NGTB50N65FL2WG
onsemi
IGBT TRENCH/FS 650V 100A TO247-3
STGW60H65DFB
STGW60H65DFB
STMicroelectronics
IGBT 650V 80A 375W TO-247
APT54GA60B
APT54GA60B
Microchip Technology
IGBT 600V 96A 416W TO-247
APT13GP120BDQ1G
APT13GP120BDQ1G
Microchip Technology
IGBT 1200V 41A 250W TO247
IXXX100N60B3H1
IXXX100N60B3H1
IXYS
IGBT 600V 200A 695W TO247
NGTB30N60IHLWG
NGTB30N60IHLWG
onsemi
IGBT 600V 30A TO247
SIGC07T60NCX1SA1
SIGC07T60NCX1SA1
Infineon Technologies
IGBT 3 CHIP 600V WAFER
RGT50TM65DGC9
RGT50TM65DGC9
Rohm Semiconductor
FIELD STOP TRENCH IGBT

Related Product By Brand

DSEC60-03AR
DSEC60-03AR
IXYS
DIODE ARRAY 300V 30A ISOPLUS247
DSEP30-12A
DSEP30-12A
IXYS
DIODE GEN PURP 1.2KV 30A TO247AD
DMA30E1800HA
DMA30E1800HA
IXYS
DIODE GEN PURP 1800V 30A TO247
CLA100E1200TZ-TUB
CLA100E1200TZ-TUB
IXYS
THYRISTOR SCR 1200V 100A TO268AA
IXTA48P05T
IXTA48P05T
IXYS
MOSFET P-CH 50V 48A TO263
IXTN210P10T
IXTN210P10T
IXYS
MOSFET P-CH 100V 210A SOT227B
IXTK40P50P
IXTK40P50P
IXYS
MOSFET P-CH 500V 40A TO264
IXTA64N10L2-TRL
IXTA64N10L2-TRL
IXYS
MOSFET N-CH 100V 64A TO263
IXTU01N80
IXTU01N80
IXYS
MOSFET N-CH 800V 100MA TO251
IXTH72N20
IXTH72N20
IXYS
MOSFET N-CH 200V 72A TO247
IXBF20N360
IXBF20N360
IXYS
IGBT 3600V 45A ISOPLUS I4PAK
IXDI514PI
IXDI514PI
IXYS
IC GATE DRVR LOW-SIDE 8DIP