IXSK35N120BD1
  • Share:

IXYS IXSK35N120BD1

Manufacturer No:
IXSK35N120BD1
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXSK35N120BD1 Datasheet
ECAD Model:
-
Description:
IGBT 1200V 70A 300W TO264
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

IGBT Type:PT
Voltage - Collector Emitter Breakdown (Max):1200 V
Current - Collector (Ic) (Max):70 A
Current - Collector Pulsed (Icm):140 A
Vce(on) (Max) @ Vge, Ic:3.6V @ 15V, 35A
Power - Max:300 W
Switching Energy:5mJ (off)
Input Type:Standard
Gate Charge:120 nC
Td (on/off) @ 25°C:36ns/160ns
Test Condition:960V, 35A, 5Ohm, 15V
Reverse Recovery Time (trr):40 ns
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-264-3, TO-264AA
Supplier Device Package:TO-264AA(IXSK)
0 Remaining View Similar

In Stock

-
114

Please send RFQ , we will respond immediately.

Similar Products

Part Number IXSK35N120BD1 IXSR35N120BD1   IXSX35N120BD1  
Manufacturer IXYS IXYS IXYS
Product Status Obsolete Obsolete Obsolete
IGBT Type PT PT PT
Voltage - Collector Emitter Breakdown (Max) 1200 V 1200 V 1200 V
Current - Collector (Ic) (Max) 70 A 70 A 70 A
Current - Collector Pulsed (Icm) 140 A 140 A 140 A
Vce(on) (Max) @ Vge, Ic 3.6V @ 15V, 35A 3.6V @ 15V, 35A 3.6V @ 15V, 35A
Power - Max 300 W 250 W 300 W
Switching Energy 5mJ (off) 5mJ (off) 5mJ (off)
Input Type Standard Standard Standard
Gate Charge 120 nC 120 nC 120 nC
Td (on/off) @ 25°C 36ns/160ns 36ns/160ns 36ns/160ns
Test Condition 960V, 35A, 5Ohm, 15V 960V, 35A, 2.7Ohm, 15V 960V, 35A, 5Ohm, 15V
Reverse Recovery Time (trr) 40 ns 40 ns 40 ns
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Package / Case TO-264-3, TO-264AA TO-247-3 TO-247-3 Variant
Supplier Device Package TO-264AA(IXSK) ISOPLUS247™ PLUS247™-3

Related Product By Categories

STGWT80H65FB
STGWT80H65FB
STMicroelectronics
IGBT 650V 120A 469W TO3P-3L
IXGF20N300
IXGF20N300
IXYS
IGBT 3000V 22A 100W I4-PAK
STGB30V60DF
STGB30V60DF
STMicroelectronics
IGBT 600V 60A 258W D2PAK
STGWA15H120F2
STGWA15H120F2
STMicroelectronics
IGBT HB 1200V 15A HS TO247-3
IXXA30N65C3HV
IXXA30N65C3HV
IXYS
IGBT
MGP15N40CL
MGP15N40CL
onsemi
IGBT 440V 15A 150W TO220AB
IRG4BC30KD-SPBF
IRG4BC30KD-SPBF
Infineon Technologies
IGBT 600V 28A 100W D2PAK
IXGR16N170AH1
IXGR16N170AH1
IXYS
IGBT 1700V 16A 120W ISOPLUS247
IXGX32N170AH1
IXGX32N170AH1
IXYS
IGBT 1700V 32A 350W PLUS247
GT10J312(Q)
GT10J312(Q)
Toshiba Semiconductor and Storage
IGBT 600V 10A 60W TO220SM
IRGS4064DPBF
IRGS4064DPBF
Infineon Technologies
IGBT 600V 20A 101W D2PAK
IRG8P08N120KD-EPBF
IRG8P08N120KD-EPBF
Infineon Technologies
IGBT 1200V 15A TO247AD

Related Product By Brand

DSEP2X61-12A
DSEP2X61-12A
IXYS
DIODE MODULE 1.2KV 60A SOT227B
IXTY14N60X2
IXTY14N60X2
IXYS
MOSFET N-CH 600V 14A TO252
IXTY02N120P
IXTY02N120P
IXYS
MOSFET N-CH 1200V 200MA TO252
IXFP22N60P3
IXFP22N60P3
IXYS
MOSFET N-CH 600V 22A TO220AB
IXTT120N15P
IXTT120N15P
IXYS
MOSFET N-CH 150V 120A TO268
IXTA130N10T-TRL
IXTA130N10T-TRL
IXYS
MOSFET N-CH 100V 130A TO263
IXFR80N60P3
IXFR80N60P3
IXYS
MOSFET N-CH 600V 48A ISOPLUS247
IXFB80N50Q2
IXFB80N50Q2
IXYS
MOSFET N-CH 500V 80A PLUS264
IXFH24N50Q
IXFH24N50Q
IXYS
MOSFET N-CH 500V 24A TO247AD
IXGY2N120
IXGY2N120
IXYS
IGBT 1200V 5A 25W TO252AA
IXGX60N60B2D1
IXGX60N60B2D1
IXYS
IGBT 600V 75A 500W PLUS247
IXDD409PI
IXDD409PI
IXYS
IC GATE DRVR LOW-SIDE 8DIP