IXSA20N60B2D1
  • Share:

IXYS IXSA20N60B2D1

Manufacturer No:
IXSA20N60B2D1
Manufacturer:
IXYS
Package:
Bulk
Datasheet:
IXSA20N60B2D1 Datasheet
ECAD Model:
-
Description:
IGBT 600V 35A 190W TO263
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

IGBT Type:PT
Voltage - Collector Emitter Breakdown (Max):600 V
Current - Collector (Ic) (Max):35 A
Current - Collector Pulsed (Icm):60 A
Vce(on) (Max) @ Vge, Ic:2.5V @ 15V, 16A
Power - Max:190 W
Switching Energy:380µJ (off)
Input Type:Standard
Gate Charge:33 nC
Td (on/off) @ 25°C:30ns/116ns
Test Condition:480V, 16A, 10Ohm, 15V
Reverse Recovery Time (trr):30 ns
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:TO-263AA
0 Remaining View Similar

In Stock

-
442

Please send RFQ , we will respond immediately.

Similar Products

Part Number IXSA20N60B2D1 IXSP20N60B2D1   IXSH20N60B2D1   IXSQ20N60B2D1   IXSA10N60B2D1  
Manufacturer IXYS IXYS IXYS IXYS IXYS
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete
IGBT Type PT PT PT PT PT
Voltage - Collector Emitter Breakdown (Max) 600 V 600 V 600 V 600 V 600 V
Current - Collector (Ic) (Max) 35 A 35 A 35 A 35 A 20 A
Current - Collector Pulsed (Icm) 60 A 60 A 60 A - 30 A
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 16A 2.5V @ 15V, 16A 2.5V @ 15V, 16A 2.5V @ 15V, 16A 2.5V @ 15V, 10A
Power - Max 190 W 190 W 190 W 190 W 100 W
Switching Energy 380µJ (off) 380µJ (off) 380µJ (off) 380µJ (off) 430µJ (off)
Input Type Standard Standard Standard Standard Standard
Gate Charge 33 nC 33 nC 33 nC 33 nC 17 nC
Td (on/off) @ 25°C 30ns/116ns 30ns/116ns 30ns/116ns 30ns/116ns 30ns/180ns
Test Condition 480V, 16A, 10Ohm, 15V 480V, 16A, 10Ohm, 15V 480V, 16A, 10Ohm, 15V - 480V, 10A, 30Ohm, 15V
Reverse Recovery Time (trr) 30 ns 30 ns 30 ns 30 ns 25 ns
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Through Hole Through Hole Through Hole Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-220-3 TO-247-3 TO-3P-3, SC-65-3 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package TO-263AA TO-220-3 TO-247AD TO-3P TO-263AA

Related Product By Categories

ISL9V5036S3ST
ISL9V5036S3ST
onsemi
IGBT 390V 46A 250W TO263AB
AIKQ100N60CTXKSA1
AIKQ100N60CTXKSA1
Infineon Technologies
IC DISCRETE 600V TO247-3
FGPF30N30TTU
FGPF30N30TTU
Fairchild Semiconductor
IGBT, 300V, N-CHANNEL, TO-220AB
AIGB40N65H5ATMA1
AIGB40N65H5ATMA1
Infineon Technologies
DISCRETE SWITCHES
IHW15N120R3FKSA1
IHW15N120R3FKSA1
Infineon Technologies
IGBT 1200V 30A 254W TO247-3
HGTP14N44G3VL
HGTP14N44G3VL
Fairchild Semiconductor
IGBT, 27A, 490V, N-CHANNEL
IRGS10B60KDPBF
IRGS10B60KDPBF
Infineon Technologies
IGBT 600V 22A 156W D2PAK
IXGH24N120IH
IXGH24N120IH
IXYS
IGBT 1200V TO-247
IXGP70N33TBM-A
IXGP70N33TBM-A
IXYS
IGBT 330V TO-220AB
GA35XCP12-247
GA35XCP12-247
GeneSiC Semiconductor
IGBT 1200V SOT247
STGWT60H60DLFB
STGWT60H60DLFB
STMicroelectronics
IGBT 600V 80A 375W TO3P-3L
RGSX5TS65EGC11
RGSX5TS65EGC11
Rohm Semiconductor
8S SHORT-CIRCUIT TOLERANCE, 650V

Related Product By Brand

VBO130-18NO7
VBO130-18NO7
IXYS
BRIDGE RECT 1P 1.8KV 122A PWS-E
DHG30I1200HA
DHG30I1200HA
IXYS
DIODE GEN PURP 1.2KV 30A TO247
MMIX1H60N150V1
MMIX1H60N150V1
IXYS
SCR 1.5KV 60A 24SMPD
MMIX1F420N10T
MMIX1F420N10T
IXYS
MOSFET N-CH 100V 334A 24SMPD
IXFA22N65X2
IXFA22N65X2
IXYS
MOSFET N-CH 650V 22A TO263
IXFT140N10P
IXFT140N10P
IXYS
MOSFET N-CH 100V 140A TO268
IXTP230N04T4
IXTP230N04T4
IXYS
MOSFET N-CH 40V 230A TO220AB
IXFH8N80
IXFH8N80
IXYS
MOSFET N-CH 800V 8A TO247AD
IXFH16N60P3
IXFH16N60P3
IXYS
MOSFET N-CH 600V 16A TO247
IXTA110N12T2
IXTA110N12T2
IXYS
MOSFET N-CH 120V 110A TO263
IXCP50M35A
IXCP50M35A
IXYS
IC CURRENT REGULATOR TO220AB
IXDI509SIA
IXDI509SIA
IXYS
IC GATE DRVR LOW-SIDE 8SOIC