IXKP24N60C5M
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IXYS IXKP24N60C5M

Manufacturer No:
IXKP24N60C5M
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXKP24N60C5M Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 600V 8.5A TO220ABFP
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:8.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:165mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:3.5V @ 790µA
Gate Charge (Qg) (Max) @ Vgs:52 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2000 pF @ 100 V
FET Feature:Super Junction
Power Dissipation (Max):- 
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220ABFP
Package / Case:TO-220-3 Full Pack
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Similar Products

Part Number IXKP24N60C5M IXKP20N60C5M   IXKP24N60C5  
Manufacturer IXYS IXYS IXYS
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 8.5A (Tc) 7.6A (Tc) 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 165mOhm @ 10A, 10V 200mOhm @ 10A, 10V 165mOhm @ 12A, 10V
Vgs(th) (Max) @ Id 3.5V @ 790µA 3.5V @ 1.1mA 3.5V @ 790µA
Gate Charge (Qg) (Max) @ Vgs 52 nC @ 10 V 30 nC @ 10 V 52 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2000 pF @ 100 V 1520 pF @ 100 V 2000 pF @ 100 V
FET Feature Super Junction Super Junction Super Junction
Power Dissipation (Max) - - -
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-220ABFP TO-220ABFP TO-220-3
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3

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