IXKP10N60C5
  • Share:

IXYS IXKP10N60C5

Manufacturer No:
IXKP10N60C5
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXKP10N60C5 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 600V 10A TO220AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:10A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:385mOhm @ 5.2A, 10V
Vgs(th) (Max) @ Id:3.5V @ 340µA
Gate Charge (Qg) (Max) @ Vgs:22 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:790 pF @ 100 V
FET Feature:Super Junction
Power Dissipation (Max):- 
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
0 Remaining View Similar

In Stock

-
169

Please send RFQ , we will respond immediately.

Similar Products

Part Number IXKP10N60C5 IXKP10N60C5M   IXKP13N60C5   IXKP20N60C5  
Manufacturer IXYS IXYS IXYS IXYS
Product Status Obsolete Obsolete Active Active
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 10A (Tc) 5.4A (Tc) 13A (Tc) 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 385mOhm @ 5.2A, 10V 385mOhm @ 5.2A, 10V 300mOhm @ 6.6A, 10V 200mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 3.5V @ 340µA 3.5V @ 340µA 3.5V @ 440µA 3.5V @ 1.1mA
Gate Charge (Qg) (Max) @ Vgs 22 nC @ 10 V 22 nC @ 10 V 30 nC @ 10 V 45 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 790 pF @ 100 V 790 pF @ 100 V 1100 pF @ 100 V 1520 pF @ 100 V
FET Feature Super Junction Super Junction Super Junction Super Junction
Power Dissipation (Max) - - - -
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220-3 TO-220ABFP TO-220-3 TO-220-3
Package / Case TO-220-3 TO-220-3 Full Pack TO-220-3 TO-220-3

Related Product By Categories

STP34N65M5
STP34N65M5
STMicroelectronics
MOSFET N-CH 650V 28A TO220
PJA3431_R1_00001
PJA3431_R1_00001
Panjit International Inc.
30V P-CHANNEL ENHANCEMENT MODE M
SSM3K16FU,LF
SSM3K16FU,LF
Toshiba Semiconductor and Storage
MOSFET N-CH 20V 100MA USM
FDFMA2N028Z
FDFMA2N028Z
onsemi
MOSFET N-CH 20V 3.7A 6MICROFET
IRFH8307TRPBF
IRFH8307TRPBF
Infineon Technologies
MOSFET N-CH 30V 42A/100A 8PQFN
IPSA70R1K4CEAKMA1
IPSA70R1K4CEAKMA1
Infineon Technologies
MOSFET N-CH 700V 5.4A TO251-3
RM3407
RM3407
Rectron USA
MOSFET P-CHANNEL 30V 4.3A SOT23
DMTH4007SK3-13
DMTH4007SK3-13
Diodes Incorporated
MOSFET N-CH 40V 17.6A/76A TO252
IXFT30N50P
IXFT30N50P
IXYS
MOSFET N-CH 500V 30A TO268
IPB80N06S2L07ATMA1
IPB80N06S2L07ATMA1
Infineon Technologies
MOSFET N-CH 55V 80A TO263-3
AUIRF2903Z
AUIRF2903Z
Infineon Technologies
MOSFET N-CH 30V 160A TO220AB
R8009KNXC7G
R8009KNXC7G
Rohm Semiconductor
HIGH-SPEED SWITCHING NCH 800V 9A

Related Product By Brand

DPG30C200PC-TUB
DPG30C200PC-TUB
IXYS
POWER DIODE DISCRETES-FRED TO-26
DSEC60-02AQ
DSEC60-02AQ
IXYS
DIODE ARRAY GP 200V 30A TO3P
DPG60IM300PC-TRL
DPG60IM300PC-TRL
IXYS
DIODE GEN PURP 300V 60A TO263
MCC225-16IO1
MCC225-16IO1
IXYS
MOD THYRISTOR DUAL 1600V Y1-CU
IXTP16N50P
IXTP16N50P
IXYS
MOSFET N-CH 500V 16A TO220AB
IXTH150N15X4
IXTH150N15X4
IXYS
MOSFET N-CH 150V 150A TO247
IXTA2N100P
IXTA2N100P
IXYS
MOSFET N-CH 1000V 2A TO263
IXFA4N100P-TRL
IXFA4N100P-TRL
IXYS
MOSFET N-CH 1000V 4A TO263
IXFV20N80P
IXFV20N80P
IXYS
MOSFET N-CH 800V 20A PLUS220
IXFX74N50P2
IXFX74N50P2
IXYS
MOSFET N-CH 500V 74A PLUS247-3
IXGP20N120BD1
IXGP20N120BD1
IXYS
IGBT 1200V 40A 190W TO220
IXGP24N60C4D1
IXGP24N60C4D1
IXYS
IGBT 600V 56A 190W TO220