IXKP10N60C5
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IXYS IXKP10N60C5

Manufacturer No:
IXKP10N60C5
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXKP10N60C5 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 600V 10A TO220AB
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:10A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:385mOhm @ 5.2A, 10V
Vgs(th) (Max) @ Id:3.5V @ 340µA
Gate Charge (Qg) (Max) @ Vgs:22 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:790 pF @ 100 V
FET Feature:Super Junction
Power Dissipation (Max):- 
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
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Similar Products

Part Number IXKP10N60C5 IXKP10N60C5M   IXKP13N60C5   IXKP20N60C5  
Manufacturer IXYS IXYS IXYS IXYS
Product Status Obsolete Obsolete Active Active
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 10A (Tc) 5.4A (Tc) 13A (Tc) 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 385mOhm @ 5.2A, 10V 385mOhm @ 5.2A, 10V 300mOhm @ 6.6A, 10V 200mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 3.5V @ 340µA 3.5V @ 340µA 3.5V @ 440µA 3.5V @ 1.1mA
Gate Charge (Qg) (Max) @ Vgs 22 nC @ 10 V 22 nC @ 10 V 30 nC @ 10 V 45 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 790 pF @ 100 V 790 pF @ 100 V 1100 pF @ 100 V 1520 pF @ 100 V
FET Feature Super Junction Super Junction Super Junction Super Junction
Power Dissipation (Max) - - - -
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220-3 TO-220ABFP TO-220-3 TO-220-3
Package / Case TO-220-3 TO-220-3 Full Pack TO-220-3 TO-220-3

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