IXKH35N60C5
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IXYS IXKH35N60C5

Manufacturer No:
IXKH35N60C5
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXKH35N60C5 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 600V 35A TO247AD
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:35A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:100mOhm @ 18A, 10V
Vgs(th) (Max) @ Id:3.9V @ 1.2mA
Gate Charge (Qg) (Max) @ Vgs:70 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2800 pF @ 100 V
FET Feature:Super Junction
Power Dissipation (Max):- 
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247AD
Package / Case:TO-247-3
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Similar Products

Part Number IXKH35N60C5 IXKP35N60C5   IXKH30N60C5  
Manufacturer IXYS IXYS IXYS
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 35A (Tc) 35A (Tc) 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 100mOhm @ 18A, 10V 100mOhm @ 18A, 10V 125mOhm @ 16A, 10V
Vgs(th) (Max) @ Id 3.9V @ 1.2mA 3.9V @ 1.2mA 3.5V @ 1.1mA
Gate Charge (Qg) (Max) @ Vgs 70 nC @ 10 V 70 nC @ 10 V 70 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2800 pF @ 100 V 2800 pF @ 100 V 2500 pF @ 10 V
FET Feature Super Junction - Super Junction
Power Dissipation (Max) - - -
Operating Temperature -55°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-247AD TO-220-3 TO-247AD
Package / Case TO-247-3 TO-220-3 TO-247-3

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