IXKH24N60C5
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IXYS IXKH24N60C5

Manufacturer No:
IXKH24N60C5
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXKH24N60C5 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 600V 24A TO247AD
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:24A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:165mOhm @ 12A, 10V
Vgs(th) (Max) @ Id:3.5V @ 790µA
Gate Charge (Qg) (Max) @ Vgs:52 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2000 pF @ 100 V
FET Feature:Super Junction
Power Dissipation (Max):- 
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247AD
Package / Case:TO-247-3
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Similar Products

Part Number IXKH24N60C5 IXKP24N60C5   IXKH20N60C5  
Manufacturer IXYS IXYS IXYS
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 24A (Tc) 24A (Tc) 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 165mOhm @ 12A, 10V 165mOhm @ 12A, 10V 200mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 3.5V @ 790µA 3.5V @ 790µA 3.5V @ 1.1mA
Gate Charge (Qg) (Max) @ Vgs 52 nC @ 10 V 52 nC @ 10 V 45 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2000 pF @ 100 V 2000 pF @ 100 V 1520 pF @ 100 V
FET Feature Super Junction Super Junction -
Power Dissipation (Max) - - -
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-247AD TO-220-3 TO-247AD
Package / Case TO-247-3 TO-220-3 TO-247-3

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