IXKC25N80C
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IXYS IXKC25N80C

Manufacturer No:
IXKC25N80C
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXKC25N80C Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 800V 25A ISOPLUS220
Delivery:
Payment:
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iso45001
iso9001
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:25A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:150mOhm @ 18A, 10V
Vgs(th) (Max) @ Id:4V @ 2mA
Gate Charge (Qg) (Max) @ Vgs:180 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4600 pF @ 25 V
FET Feature:Super Junction
Power Dissipation (Max):- 
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:ISOPLUS220™
Package / Case:ISOPLUS220™
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Similar Products

Part Number IXKC25N80C IXKR25N80C  
Manufacturer IXYS IXYS
Product Status Obsolete Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V 800 V
Current - Continuous Drain (Id) @ 25°C 25A (Tc) 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 150mOhm @ 18A, 10V 150mOhm @ 18A, 10V
Vgs(th) (Max) @ Id 4V @ 2mA 4V @ 2mA
Gate Charge (Qg) (Max) @ Vgs 180 nC @ 10 V 355 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 4600 pF @ 25 V -
FET Feature Super Junction Super Junction
Power Dissipation (Max) - -
Operating Temperature -55°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package ISOPLUS220™ ISOPLUS247™
Package / Case ISOPLUS220™ TO-247-3

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