IXKC19N60C5
  • Share:

IXYS IXKC19N60C5

Manufacturer No:
IXKC19N60C5
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXKC19N60C5 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 600V 19A ISOPLUS220
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:19A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:125mOhm @ 16A, 10V
Vgs(th) (Max) @ Id:3.5V @ 1.1mA
Gate Charge (Qg) (Max) @ Vgs:70 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2500 pF @ 100 V
FET Feature:Super Junction
Power Dissipation (Max):- 
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:ISOPLUS220™
Package / Case:ISOPLUS220™
0 Remaining View Similar

In Stock

-
473

Please send RFQ , we will respond immediately.

Similar Products

Part Number IXKC19N60C5 IXKC15N60C5  
Manufacturer IXYS IXYS
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 19A (Tc) 15A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 125mOhm @ 16A, 10V 165mOhm @ 12A, 10V
Vgs(th) (Max) @ Id 3.5V @ 1.1mA 3.5V @ 900µA
Gate Charge (Qg) (Max) @ Vgs 70 nC @ 10 V 52 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2500 pF @ 100 V 2000 pF @ 100 V
FET Feature Super Junction Super Junction
Power Dissipation (Max) - -
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package ISOPLUS220™ ISOPLUS220™
Package / Case ISOPLUS220™ ISOPLUS220™

Related Product By Categories

IRFU430BTU
IRFU430BTU
Fairchild Semiconductor
N-CHANNEL POWER MOSFET
FDB8160-F085
FDB8160-F085
Fairchild Semiconductor
80A, 30V, 0.0018OHM, N-CHANNEL,
NTLUS3A90PZTAG
NTLUS3A90PZTAG
onsemi
MOSFET P-CH 20V 2.6A 6UDFN
SI4128DY-T1-E3
SI4128DY-T1-E3
Vishay Siliconix
MOSFET N-CH 30V 10.9A 8SO
NVMYS7D3N04CLTWG
NVMYS7D3N04CLTWG
onsemi
MOSFET N-CH 40V 17A/52A 4LFPAK
IXFN220N20X3
IXFN220N20X3
IXYS
MOSFET N-CH 200V 160A SOT227B
NDP6020P
NDP6020P
Fairchild Semiconductor
POWER FIELD-EFFECT TRANSISTOR, 2
STP45NE06
STP45NE06
STMicroelectronics
MOSFET N-CH 60V 45A TO220
IRF2204LPBF
IRF2204LPBF
Infineon Technologies
MOSFET N-CH 40V 170A TO262
NTMS4700NR2G
NTMS4700NR2G
onsemi
MOSFET N-CH 30V 8.6A 8SOIC
3LP01C-TB-E
3LP01C-TB-E
onsemi
MOSFET P-CH 30V 100MA 3CP
RDN120N25FU6
RDN120N25FU6
Rohm Semiconductor
MOSFET N-CH 250V 12A TO220FN

Related Product By Brand

VBE17-12NO7
VBE17-12NO7
IXYS
BRIDGE RECT 1P 1.2KV 19A ECOPAC1
VUO34-08NO1
VUO34-08NO1
IXYS
BRIDGE RECT 3PHASE 800V 36A V1-A
VUO80-18NO1
VUO80-18NO1
IXYS
BRIDGE RECT 3P 1.8KV 82A V1-A
IXFP60N25X3
IXFP60N25X3
IXYS
MOSFET N-CH 250V 60A TO220AB
IXTP64N10L2
IXTP64N10L2
IXYS
MOSFET N-CH 100V 64A TO220AB
IXFP8N65X2
IXFP8N65X2
IXYS
MOSFET N-CH 650V 8A TO220
IXFA12N50P-TRL
IXFA12N50P-TRL
IXYS
MOSFET N-CH 500V 12A TO263
IXTA180N085T7
IXTA180N085T7
IXYS
MOSFET N-CH 85V 180A TO263-7
MIXA61H1200ED
MIXA61H1200ED
IXYS
IGBT MODULE 1200V 85A 290W E2
IXGP20N120B3
IXGP20N120B3
IXYS
IGBT 1200V 36A 180W TO220
IXGT32N170A
IXGT32N170A
IXYS
IGBT 1700V 32A 350W TO268
IXGA7N60BD1
IXGA7N60BD1
IXYS
IGBT 600V 14A 80W TO263