IXYS-IXGX50N120C3H1 - Transistors - IGBTs - Single Product Specifications and Latest Quotes

IGBT Type:	PT
Voltage - Collector Emitter Breakdown (Max):	1200 V
Current - Collector (Ic) (Max):	95 A
Current - Collector Pulsed (Icm):	240 A
Vce(on) (Max) @ Vge, Ic:	4.2V @ 15V, 40A
Power - Max:	460 W
Switching Energy:	2mJ (on), 630µJ (off)
Input Type:	Standard
Gate Charge:	196 nC
Td (on/off) @ 25°C:	31ns/123ns
Test Condition:	600V, 40A, 2Ohm, 15V
Reverse Recovery Time (trr):	75 ns
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-247-3 Variant
Supplier Device Package:	PLUS247™-3

IXYS IXGX50N120C3H1