IXYS-IXGT32N120A3 - Transistors - IGBTs - Single Product Specifications and Latest Quotes

IGBT Type:	PT
Voltage - Collector Emitter Breakdown (Max):	1200 V
Current - Collector (Ic) (Max):	75 A
Current - Collector Pulsed (Icm):	230 A
Vce(on) (Max) @ Vge, Ic:	2.35V @ 15V, 32A
Power - Max:	300 W
Switching Energy:	-
Input Type:	Standard
Gate Charge:	89 nC
Td (on/off) @ 25°C:	-
Test Condition:	-
Reverse Recovery Time (trr):	-
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Supplier Device Package:	TO-268AA

IXYS IXGT32N120A3