IXGT10N170
  • Share:

IXYS IXGT10N170

Manufacturer No:
IXGT10N170
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXGT10N170 Datasheet
ECAD Model:
-
Description:
IGBT 1700V 20A 110W TO268
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

IGBT Type:NPT
Voltage - Collector Emitter Breakdown (Max):1700 V
Current - Collector (Ic) (Max):20 A
Current - Collector Pulsed (Icm):70 A
Vce(on) (Max) @ Vge, Ic:4V @ 15V, 10A
Power - Max:110 W
Switching Energy:- 
Input Type:Standard
Gate Charge:32 nC
Td (on/off) @ 25°C:- 
Test Condition:- 
Reverse Recovery Time (trr):- 
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Supplier Device Package:TO-268AA
0 Remaining View Similar

In Stock

$9.45
51

Please send RFQ , we will respond immediately.

Similar Products

Part Number IXGT10N170 IXGT10N170A   IXGT16N170  
Manufacturer IXYS IXYS IXYS
Product Status Active Active Active
IGBT Type NPT NPT NPT
Voltage - Collector Emitter Breakdown (Max) 1700 V 1700 V 1700 V
Current - Collector (Ic) (Max) 20 A 10 A 32 A
Current - Collector Pulsed (Icm) 70 A 20 A 80 A
Vce(on) (Max) @ Vge, Ic 4V @ 15V, 10A 6V @ 15V, 5A 3.5V @ 15V, 16A
Power - Max 110 W 140 W 190 W
Switching Energy - 380µJ (off) 9.3mJ (off)
Input Type Standard Standard Standard
Gate Charge 32 nC 29 nC 78 nC
Td (on/off) @ 25°C - 46ns/190ns 45ns/400ns
Test Condition - 850V, 10A, 22Ohm, 15V 1360V, 16A, 10Ohm, 15V
Reverse Recovery Time (trr) - - -
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA TO-268-3, D³Pak (2 Leads + Tab), TO-268AA TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Supplier Device Package TO-268AA TO-268AA TO-268AA

Related Product By Categories

IXYA20N120C4HV
IXYA20N120C4HV
IXYS
IGBT 1200V 20A X4 HSPEED TO263D2
STGY80H65DFB
STGY80H65DFB
STMicroelectronics
IGBT 650V 120A 469W MAX247
IXYX120N120C3
IXYX120N120C3
IXYS
IGBT 1200V 240A 1500W PLUS247
IRG4PH40KDPBF
IRG4PH40KDPBF
Infineon Technologies
IGBT 1200V 30A 160W TO247AC
APT75GN60B2DQ3G
APT75GN60B2DQ3G
Microsemi Corporation
IGBT 600V 155A 536W TO264
IXGH30N60B2D1
IXGH30N60B2D1
IXYS
IGBT 600V 70A 190W TO247AD
IXGR32N60CD1
IXGR32N60CD1
IXYS
IGBT 600V 45A 140W ISOPLUS247
AUIRGF65G40D0
AUIRGF65G40D0
Infineon Technologies
IGBT 600V 62A 625W TO247
GPA030A120I-FD
GPA030A120I-FD
SemiQ
IGBT 1200V 60A 329W TO247
NGTB30N65IHL2WG
NGTB30N65IHL2WG
onsemi
IGBT TRENCH/FS 650V 60A TO247-3
SIGC03T60EX7SA1
SIGC03T60EX7SA1
Infineon Technologies
IGBT 3 CHIP 600V 4A WAFER
RGW80TS65CHRC11
RGW80TS65CHRC11
Rohm Semiconductor
HIGH-SPEED FAST SWITCHING TYPE,

Related Product By Brand

DMA150YA1600NA
DMA150YA1600NA
IXYS
BRIDGE RECT 1P 1.6KV SOT227B
MCC250-16IO1
MCC250-16IO1
IXYS
MOD THYRISTOR DUAL 1600V Y2-DCB
IXFH36N50P
IXFH36N50P
IXYS
MOSFET N-CH 500V 36A TO247AD
IXFN240N25X3
IXFN240N25X3
IXYS
MOSFET N-CH 250V 240A SOT227B
IXFA4N100P
IXFA4N100P
IXYS
MOSFET N-CH 1000V 4A TO263
IXFA130N15X3
IXFA130N15X3
IXYS
MOSFET N-CH 150V 130A TO263AA
IXFP4N100P
IXFP4N100P
IXYS
MOSFET N-CH 1000V 4A TO220AB
IXFA14N85XHV
IXFA14N85XHV
IXYS
MOSFET N-CH 850V 14A TO263
IXTA86N20T
IXTA86N20T
IXYS
MOSFET N-CH 200V 86A TO263
IXFV30N60P
IXFV30N60P
IXYS
MOSFET N-CH 600V 30A PLUS220
IXGF30N400
IXGF30N400
IXYS
IGBT 4000V 30A 160W I4-PAK
IXDN404PI
IXDN404PI
IXYS
IC GATE DRVR LOW-SIDE 8DIP