IXGR50N60B2D1
  • Share:

IXYS IXGR50N60B2D1

Manufacturer No:
IXGR50N60B2D1
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXGR50N60B2D1 Datasheet
ECAD Model:
-
Description:
IGBT 600V 68A 200W ISOPLUS247
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

IGBT Type:- 
Voltage - Collector Emitter Breakdown (Max):600 V
Current - Collector (Ic) (Max):68 A
Current - Collector Pulsed (Icm):300 A
Vce(on) (Max) @ Vge, Ic:2.2V @ 15V, 40A
Power - Max:200 W
Switching Energy:550µJ (off)
Input Type:Standard
Gate Charge:140 nC
Td (on/off) @ 25°C:18ns/190ns
Test Condition:480V, 40A, 5Ohm, 15V
Reverse Recovery Time (trr):35 ns
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-247-3
Supplier Device Package:ISOPLUS247™
0 Remaining View Similar

In Stock

-
368

Please send RFQ , we will respond immediately.

Similar Products

Part Number IXGR50N60B2D1 IXGR50N60BD1   IXGR50N60C2D1   IXGR50N90B2D1   IXGR60N60B2D1   IXGR40N60B2D1  
Manufacturer IXYS IXYS IXYS IXYS IXYS IXYS
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
IGBT Type - - PT NPT PT PT
Voltage - Collector Emitter Breakdown (Max) 600 V 600 V 600 V 900 V 600 V 600 V
Current - Collector (Ic) (Max) 68 A 75 A 75 A 40 A 75 A 60 A
Current - Collector Pulsed (Icm) 300 A 200 A 300 A 200 A 300 A 200 A
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 40A 2.5V @ 15V, 50A 2.7V @ 15V, 40A 2.9V @ 15V, 50A 2V @ 15V, 50A 1.9V @ 15V, 30A
Power - Max 200 W 250 W 200 W 100 W 250 W 167 W
Switching Energy 550µJ (off) 3mJ (off) 380µJ (off) 4.7mJ (off) 1mJ (off) 400µJ (off)
Input Type Standard Standard Standard Standard Standard Standard
Gate Charge 140 nC 110 nC 138 nC 135 nC 170 nC 100 nC
Td (on/off) @ 25°C 18ns/190ns 50ns/110ns 18ns/115ns 20ns/350ns 28ns/160ns 18ns/130ns
Test Condition 480V, 40A, 5Ohm, 15V 480V, 50A, 2.7Ohm, 15V 480V, 40A, 2Ohm, 15V 720V, 50A, 5Ohm, 15V 400V, 50A, 3.3Ohm, 15V 400V, 30A, 3.3Ohm, 15V
Reverse Recovery Time (trr) 35 ns 35 ns 35 ns 200 ns 35 ns 25 ns
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3
Supplier Device Package ISOPLUS247™ ISOPLUS247™ ISOPLUS247™ ISOPLUS247™ ISOPLUS247™ ISOPLUS247™

Related Product By Categories

IXYH80N90C3
IXYH80N90C3
IXYS
IGBT 900V 165A 830W TO247
RJP3047ADPK-80#T2
RJP3047ADPK-80#T2
Renesas Electronics America Inc
HIGH SPEED IGBT
HGTG10N120BND
HGTG10N120BND
onsemi
IGBT NPT 1200V 35A TO247-3
IXBH16N170A
IXBH16N170A
IXYS
IGBT 1700V 16A 150W TO247AD
STGB20V60DF
STGB20V60DF
STMicroelectronics
IGBT 600V 40A 167W D2PAK
SGB15N120ATMA1
SGB15N120ATMA1
Infineon Technologies
IGBT 1200V 30A 198W TO263-3
IRG4IBC20KD
IRG4IBC20KD
Infineon Technologies
IGBT 600V 11.5A 34W TO220FP
STGW40NC60WD
STGW40NC60WD
STMicroelectronics
IGBT 600V 70A 250W TO247
IXST30N60B
IXST30N60B
IXYS
IGBT 600V 55A 200W TO268
IXGH24N60BU1
IXGH24N60BU1
IXYS
IGBT 600V 48A 150W TO247AD
IKW75N60TAFKSA1
IKW75N60TAFKSA1
Infineon Technologies
IGBT TRENCH/FS 600V 80A TO247-3
SIGC11T60NCX1SA2
SIGC11T60NCX1SA2
Infineon Technologies
IGBT 3 CHIP 600V WAFER

Related Product By Brand

MDD142-16N1
MDD142-16N1
IXYS
DIODE MODULE 1.6KV 165A Y4-M6
DSEP12-12AZ-TUB
DSEP12-12AZ-TUB
IXYS
POWER DIODE DISCRETES-FRED TO-26
MCD224-22IO1
MCD224-22IO1
IXYS
MOD THYRISTOR/DIODE 2200V Y1-CU
IXFH78N60X3
IXFH78N60X3
IXYS
MOSFET ULTRA JCT 600V 78A TO247
IXTT110N10L2-TRL
IXTT110N10L2-TRL
IXYS
MOSFET N-CH 100V 110A TO268
IXTT80N20L
IXTT80N20L
IXYS
MOSFET N-CH 200V 80A TO268
IXFR24N100
IXFR24N100
IXYS
MOSFET N-CH 1KV 22A ISOPLUS247
IXFN140N25T
IXFN140N25T
IXYS
MOSFET N-CH 250V 120A SOT227B
IXFN72N55Q2
IXFN72N55Q2
IXYS
MOSFET N-CH 550V 72A SOT-227B
IXFJ40N30
IXFJ40N30
IXYS
MOSFET N-CH 300V 40A TO268
IXGH15N120BD1
IXGH15N120BD1
IXYS
IGBT 1200V 30A 150W TO247AD
IXDI409PI
IXDI409PI
IXYS
IC GATE DRVR LOW-SIDE 8DIP