IXYS-IXGQ85N33PCD1 - Transistors - IGBTs - Single Product Specifications and Latest Quotes

IGBT Type:	-
Voltage - Collector Emitter Breakdown (Max):	330 V
Current - Collector (Ic) (Max):	85 A
Current - Collector Pulsed (Icm):	-
Vce(on) (Max) @ Vge, Ic:	3V @ 15V, 100A
Power - Max:	150 W
Switching Energy:	-
Input Type:	Standard
Gate Charge:	80 nC
Td (on/off) @ 25°C:	-
Test Condition:	-
Reverse Recovery Time (trr):	250 ns
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-3P-3, SC-65-3
Supplier Device Package:	TO-3P

IXYS IXGQ85N33PCD1