IXGP8N100
  • Share:

IXYS IXGP8N100

Manufacturer No:
IXGP8N100
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXGP8N100 Datasheet
ECAD Model:
-
Description:
IGBT 1000V 16A 54W TO220
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

IGBT Type:PT
Voltage - Collector Emitter Breakdown (Max):1000 V
Current - Collector (Ic) (Max):16 A
Current - Collector Pulsed (Icm):32 A
Vce(on) (Max) @ Vge, Ic:2.7V @ 15V, 8A
Power - Max:54 W
Switching Energy:2.3mJ (off)
Input Type:Standard
Gate Charge:26.5 nC
Td (on/off) @ 25°C:15ns/600ns
Test Condition:800V, 8A, 120Ohm, 15V
Reverse Recovery Time (trr):- 
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-220-3
Supplier Device Package:TO-220-3
0 Remaining View Similar

In Stock

-
488

Please send RFQ , we will respond immediately.

Similar Products

Part Number IXGP8N100 IXGP2N100   IXGP4N100  
Manufacturer IXYS IXYS IXYS
Product Status Obsolete Active Active
IGBT Type PT - -
Voltage - Collector Emitter Breakdown (Max) 1000 V 1000 V 1000 V
Current - Collector (Ic) (Max) 16 A 4 A 8 A
Current - Collector Pulsed (Icm) 32 A 8 A 16 A
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 8A 2.7V @ 15V, 2A 2.7V @ 15V, 4A
Power - Max 54 W 25 W 40 W
Switching Energy 2.3mJ (off) 560µJ (off) 900µJ (off)
Input Type Standard Standard Standard
Gate Charge 26.5 nC 7.8 nC 13.6 nC
Td (on/off) @ 25°C 15ns/600ns 15ns/300ns 20ns/390ns
Test Condition 800V, 8A, 120Ohm, 15V 800V, 2A, 150Ohm, 15V 800V, 4A, 120Ohm, 15V
Reverse Recovery Time (trr) - - -
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Package / Case TO-220-3 TO-220-3 TO-220-3
Supplier Device Package TO-220-3 TO-220-3 TO-220-3

Related Product By Categories

ISL9V5036P3-F085
ISL9V5036P3-F085
onsemi
IGBT 390V 46A TO220-3
SGS5N60RUFDTU
SGS5N60RUFDTU
Fairchild Semiconductor
IGBT, 8A, 600V, N-CHANNEL
HGT1S20N60C3R
HGT1S20N60C3R
Harris Corporation
40A, 600V, RUGGED N-CHANNEL IGBT
AFGY100T65SPD
AFGY100T65SPD
onsemi
IGBT - 650 V 100 A FS3 FOR EV TR
APT30GP60BG
APT30GP60BG
Microchip Technology
IGBT 600V 100A 463W TO247
APT50GT120LRDQ2G
APT50GT120LRDQ2G
Microchip Technology
IGBT 1200V 106A 694W TO264
IRG4BC10SD-LPBF
IRG4BC10SD-LPBF
Infineon Technologies
IGBT 600V 14A 38W TO262
SGP10N60RUFDTU
SGP10N60RUFDTU
onsemi
IGBT 600V 16A TO220-3
IXGP2N100A
IXGP2N100A
IXYS
IGBT 1000V 4A 25W TO220AB
IXGH48N60B3C1
IXGH48N60B3C1
IXYS
IGBT 600V 75A 300W TO247
NGTB15N120IHWG
NGTB15N120IHWG
onsemi
IGBT 15A 1200V TO-247
NGTB40N120SWG
NGTB40N120SWG
onsemi
IGBT 40A 1200V TO-247

Related Product By Brand

MCC19-16IO8B
MCC19-16IO8B
IXYS
MOD THYRISTOR DUAL 1600V TO240AA
MCD26-08IO8B
MCD26-08IO8B
IXYS
MOD THYRISTOR/DIO 800V TO-240AA
IXFR140N30P
IXFR140N30P
IXYS
MOSFET N-CH 300V 70A ISOPLUS247
IXFN38N100P
IXFN38N100P
IXYS
MOSFET N-CH 1000V 38A SOT-227B
IXTH16N20D2
IXTH16N20D2
IXYS
MOSFET N-CH 200V 16A TO247
IXTT96N20P
IXTT96N20P
IXYS
MOSFET N-CH 200V 96A TO268
IXFN320N17T2
IXFN320N17T2
IXYS
MOSFET N-CH 170V 260A SOT227B
IXGX120N120A3
IXGX120N120A3
IXYS
IGBT 1200V 240A 830W PLUS247
IXDF502D1T/R
IXDF502D1T/R
IXYS
IC GATE DRVR LOW-SIDE 6DFN
IX2A11S1
IX2A11S1
IXYS
IC GATE DRVR HALF BRIDGE 8SOIC
IXDD430MYI
IXDD430MYI
IXYS
IC GATE DRVR LOW-SIDE TO263
IXDI404SIA
IXDI404SIA
IXYS
IC GATE DRVR LOW-SIDE 8SOIC