IXGP4N100
  • Share:

IXYS IXGP4N100

Manufacturer No:
IXGP4N100
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXGP4N100 Datasheet
ECAD Model:
-
Description:
IGBT 1000V 8A 40W TO220AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

IGBT Type:- 
Voltage - Collector Emitter Breakdown (Max):1000 V
Current - Collector (Ic) (Max):8 A
Current - Collector Pulsed (Icm):16 A
Vce(on) (Max) @ Vge, Ic:2.7V @ 15V, 4A
Power - Max:40 W
Switching Energy:900µJ (off)
Input Type:Standard
Gate Charge:13.6 nC
Td (on/off) @ 25°C:20ns/390ns
Test Condition:800V, 4A, 120Ohm, 15V
Reverse Recovery Time (trr):- 
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-220-3
Supplier Device Package:TO-220-3
0 Remaining View Similar

In Stock

-
580

Please send RFQ , we will respond immediately.

Similar Products

Part Number IXGP4N100 IXGP8N100   IXGP2N100  
Manufacturer IXYS IXYS IXYS
Product Status Active Obsolete Active
IGBT Type - PT -
Voltage - Collector Emitter Breakdown (Max) 1000 V 1000 V 1000 V
Current - Collector (Ic) (Max) 8 A 16 A 4 A
Current - Collector Pulsed (Icm) 16 A 32 A 8 A
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 4A 2.7V @ 15V, 8A 2.7V @ 15V, 2A
Power - Max 40 W 54 W 25 W
Switching Energy 900µJ (off) 2.3mJ (off) 560µJ (off)
Input Type Standard Standard Standard
Gate Charge 13.6 nC 26.5 nC 7.8 nC
Td (on/off) @ 25°C 20ns/390ns 15ns/600ns 15ns/300ns
Test Condition 800V, 4A, 120Ohm, 15V 800V, 8A, 120Ohm, 15V 800V, 2A, 150Ohm, 15V
Reverse Recovery Time (trr) - - -
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Package / Case TO-220-3 TO-220-3 TO-220-3
Supplier Device Package TO-220-3 TO-220-3 TO-220-3

Related Product By Categories

FGA40N65SMD
FGA40N65SMD
onsemi
IGBT FIELD STOP 650V 80A TO3PN
IKU10N60RXK
IKU10N60RXK
Infineon Technologies
INSULATED GATE BIPOLAR TRANSISTO
FGL40N120ANTU
FGL40N120ANTU
Fairchild Semiconductor
INSULATED GATE BIPOLAR TRANSISTO
STGW40M120DF3
STGW40M120DF3
STMicroelectronics
IGBT 1200V 80A 468W TO-247
IRG4PC30S
IRG4PC30S
Infineon Technologies
IGBT 600V 34A 100W TO247AC
IRG4BC15UD-SPBF
IRG4BC15UD-SPBF
Infineon Technologies
IGBT 600V 14A 49W D2PAK
IXGA7N60BD1
IXGA7N60BD1
IXYS
IGBT 600V 14A 80W TO263
IXGH12N60BD1
IXGH12N60BD1
IXYS
IGBT 600V 24A 100W TO247AD
IRG4RC10UDTRLP
IRG4RC10UDTRLP
Infineon Technologies
IGBT 600V 8.5A 38W DPAK
RGTH50TS65GC13
RGTH50TS65GC13
Rohm Semiconductor
HIGH-SPEED SWITCHING TYPE, 650V
RGTH00TS65DGC11
RGTH00TS65DGC11
Rohm Semiconductor
IGBT 650V 85A 277W TO-247N
RGTH80TS65DGC11
RGTH80TS65DGC11
Rohm Semiconductor
IGBT 650V 70A 234W TO-247N

Related Product By Brand

FBO16-12N
FBO16-12N
IXYS
BRIDGE RECT 1P 1.2KV 22A I4-PAC
MDD72-08N1B
MDD72-08N1B
IXYS
DIODE MODULE 800V 113A TO240AA
DGSK20-018A
DGSK20-018A
IXYS
DIODE ARRAY SCHOTTKY 180V TO220
MCC224-22IO1
MCC224-22IO1
IXYS
MOD THYRISTOR DUAL 2200V Y1-CU
IXFH90N65X3
IXFH90N65X3
IXYS
MOSFET 90A 650V X3 TO247
IXTP08N50D2
IXTP08N50D2
IXYS
MOSFET N-CH 500V 800MA TO220AB
IXTH96N20P
IXTH96N20P
IXYS
MOSFET N-CH 200V 96A TO247
IXTQ36N50P
IXTQ36N50P
IXYS
MOSFET N-CH 500V 36A TO3P
IXFQ28N60P3
IXFQ28N60P3
IXYS
MOSFET N-CH 600V 28A TO3P
IXTT8P50
IXTT8P50
IXYS
MOSFET P-CH 500V 8A TO268
IXFH13N100
IXFH13N100
IXYS
MOSFET N-CH 1000V 12.5A TO247AD
IXFH14N60P3
IXFH14N60P3
IXYS
MOSFET N-CH 600V 14A TO247AD