IXYS-IXGN200N170 - Transistors - IGBTs - Single Product Specifications and Latest Quotes

IGBT Type:	-
Voltage - Collector Emitter Breakdown (Max):	1700 V
Current - Collector (Ic) (Max):	280 A
Current - Collector Pulsed (Icm):	1050 A
Vce(on) (Max) @ Vge, Ic:	2.6V @ 15V, 100A
Power - Max:	1250 W
Switching Energy:	28mJ (on), 30mJ (off)
Input Type:	Standard
Gate Charge:	540 nC
Td (on/off) @ 25°C:	37ns/320ns
Test Condition:	850V, 100A, 1Ohm, 15V
Reverse Recovery Time (trr):	133 ns
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Chassis Mount
Package / Case:	SOT-227-4, miniBLOC
Supplier Device Package:	SOT-227B

IXYS IXGN200N170