IXYS-IXGK100N170 - Transistors - IGBTs - Single Product Specifications and Latest Quotes

IGBT Type:	-
Voltage - Collector Emitter Breakdown (Max):	1700 V
Current - Collector (Ic) (Max):	170 A
Current - Collector Pulsed (Icm):	600 A
Vce(on) (Max) @ Vge, Ic:	3V @ 15V, 100A
Power - Max:	830 W
Switching Energy:	-
Input Type:	Standard
Gate Charge:	425 nC
Td (on/off) @ 25°C:	35ns/285ns
Test Condition:	850V, 100A, 1Ohm, 15V
Reverse Recovery Time (trr):	-
Operating Temperature:	-55°C ~ 150°C
Mounting Type:	Through Hole
Package / Case:	TO-264-3, TO-264AA
Supplier Device Package:	PLUS264™

IXYS IXGK100N170