IXGH40N60B2
  • Share:

IXYS IXGH40N60B2

Manufacturer No:
IXGH40N60B2
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXGH40N60B2 Datasheet
ECAD Model:
-
Description:
IGBT 600V 75A 300W TO247
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

IGBT Type:PT
Voltage - Collector Emitter Breakdown (Max):600 V
Current - Collector (Ic) (Max):75 A
Current - Collector Pulsed (Icm):200 A
Vce(on) (Max) @ Vge, Ic:1.7V @ 15V, 30A
Power - Max:300 W
Switching Energy:400µJ (off)
Input Type:Standard
Gate Charge:100 nC
Td (on/off) @ 25°C:18ns/130ns
Test Condition:400V, 30A, 3.3Ohm, 15V
Reverse Recovery Time (trr):- 
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-247-3
Supplier Device Package:TO-247AD
0 Remaining View Similar

In Stock

-
42

Please send RFQ , we will respond immediately.

Similar Products

Part Number IXGH40N60B2 IXGH40N60C2   IXGH50N60B2   IXGH60N60B2   IXGH30N60B2   IXGH40N60B  
Manufacturer IXYS IXYS IXYS IXYS IXYS IXYS
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
IGBT Type PT PT PT PT PT -
Voltage - Collector Emitter Breakdown (Max) 600 V 600 V 600 V 600 V 600 V 600 V
Current - Collector (Ic) (Max) 75 A 75 A 75 A 75 A 70 A 75 A
Current - Collector Pulsed (Icm) 200 A 200 A 200 A 300 A 150 A 150 A
Vce(on) (Max) @ Vge, Ic 1.7V @ 15V, 30A 2.7V @ 15V, 30A 2V @ 15V, 40A 1.8V @ 15V, 50A 1.8V @ 15V, 24A 2.1V @ 15V, 40A
Power - Max 300 W 300 W 400 W 500 W 190 W 250 W
Switching Energy 400µJ (off) 200µJ (off) 550µJ (off) 1mJ (off) 320µJ (off) 2.7mJ (off)
Input Type Standard Standard Standard Standard Standard Standard
Gate Charge 100 nC 95 nC 140 nC 170 nC 66 nC 116 nC
Td (on/off) @ 25°C 18ns/130ns 18ns/90ns 18ns/190ns 28ns/160ns 13ns/110ns 25ns/180ns
Test Condition 400V, 30A, 3.3Ohm, 15V 400V, 30A, 3Ohm, 15V 480V, 40A, 5Ohm, 15V 400V, 50A, 3.3Ohm, 15V 400V, 24A, 5Ohm, 15V 480V, 40A, 4.7Ohm, 15V
Reverse Recovery Time (trr) - - - - - -
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3
Supplier Device Package TO-247AD TO-247AD TO-247AD TO-247AD TO-247AD TO-247AD

Related Product By Categories

FGA50S110P
FGA50S110P
Fairchild Semiconductor
INSULATED GATE BIPOLAR TRANSISTO
AOB5B65M1
AOB5B65M1
Alpha & Omega Semiconductor Inc.
IGBT 650V 5A TO263
IXBA16N170AHV
IXBA16N170AHV
IXYS
REVERSE CONDUCTING IGBT
STGWA40IH65DF
STGWA40IH65DF
STMicroelectronics
TRENCH GATE FIELD-STOP 650 V 40
AIKW40N65DF5XKSA1
AIKW40N65DF5XKSA1
Infineon Technologies
IC DISCRETE 650V TO247-3
IRG4PH50KDPBF-INF
IRG4PH50KDPBF-INF
Infineon Technologies
SHORT CIRCUIT RATED ULTRAFAST IG
STGW80H65FB
STGW80H65FB
STMicroelectronics
IGBT 650V 120A 469W TO-247
NGTG30N60FWG
NGTG30N60FWG
onsemi
IGBT, 600 V, 30 A, PFC, LOW FREQ
IXGH50N60A
IXGH50N60A
IXYS
IGBT 600V 75A 250W TO247AD
FGA15N120ANDTU
FGA15N120ANDTU
onsemi
IGBT 1200V 24A 200W TO3P
APT75GN60B2DQ3G
APT75GN60B2DQ3G
Microsemi Corporation
IGBT 600V 155A 536W TO264
RGCL60TK60GC11
RGCL60TK60GC11
Rohm Semiconductor
IGBT

Related Product By Brand

DPF60I200HA
DPF60I200HA
IXYS
DIODE ARRAY GP 200V 60A TO247AD
M2325HA400
M2325HA400
IXYS
DIODE FAST RECOVERY 4000V 2325A
IXFK230N20T
IXFK230N20T
IXYS
MOSFET N-CH 200V 230A TO264AA
IXFH140N10P
IXFH140N10P
IXYS
MOSFET N-CH 100V 140A TO247AD
IXTP90N15T
IXTP90N15T
IXYS
MOSFET N-CH 150V 90A TO220AB
IXTH1N170DHV
IXTH1N170DHV
IXYS
MOSFET N-CH 1700V 1A TO247HV
IXFA110N15T2-TRL
IXFA110N15T2-TRL
IXYS
MOSFET N-CH 150V 110A TO263
IXTH52N65X
IXTH52N65X
IXYS
MOSFET N-CH 650V 52A TO247
IXFR180N085
IXFR180N085
IXYS
MOSFET N-CH 85V 180A ISOPLUS247
IXFV18N90P
IXFV18N90P
IXYS
MOSFET N-CH 900V 18A PLUS220
IXGH32N60C
IXGH32N60C
IXYS
IGBT 600V 60A 200W TO247AD
IXCY30M35A
IXCY30M35A
IXYS
IC CURRENT REGULATOR DPAK