IXYS-IXGH32N90B2D1 - Transistors - IGBTs - Single Product Specifications and Latest Quotes

IGBT Type:	PT
Voltage - Collector Emitter Breakdown (Max):	900 V
Current - Collector (Ic) (Max):	64 A
Current - Collector Pulsed (Icm):	200 A
Vce(on) (Max) @ Vge, Ic:	2.7V @ 15V, 32A
Power - Max:	300 W
Switching Energy:	2.2mJ (off)
Input Type:	Standard
Gate Charge:	89 nC
Td (on/off) @ 25°C:	20ns/260ns
Test Condition:	720V, 32A, 5Ohm, 15V
Reverse Recovery Time (trr):	190 ns
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-247-3
Supplier Device Package:	TO-247AD

IXYS IXGH32N90B2D1