IXGH32N60BD1
  • Share:

IXYS IXGH32N60BD1

Manufacturer No:
IXGH32N60BD1
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXGH32N60BD1 Datasheet
ECAD Model:
-
Description:
IGBT 600V 60A 200W TO247AD
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

IGBT Type:- 
Voltage - Collector Emitter Breakdown (Max):600 V
Current - Collector (Ic) (Max):60 A
Current - Collector Pulsed (Icm):120 A
Vce(on) (Max) @ Vge, Ic:2.3V @ 15V, 32A
Power - Max:200 W
Switching Energy:600µJ (off)
Input Type:Standard
Gate Charge:110 nC
Td (on/off) @ 25°C:25ns/100ns
Test Condition:480V, 32A, 4.7Ohm, 15V
Reverse Recovery Time (trr):25 ns
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-247-3
Supplier Device Package:TO-247AD
0 Remaining View Similar

In Stock

-
542

Please send RFQ , we will respond immediately.

Similar Products

Part Number IXGH32N60BD1 IXGH32N60CD1   IXGH32N60BU1   IXGH39N60BD1   IXGH12N60BD1   IXGH30N60BD1  
Manufacturer IXYS IXYS IXYS IXYS IXYS IXYS
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
IGBT Type - - - - - -
Voltage - Collector Emitter Breakdown (Max) 600 V 600 V 600 V 600 V 600 V 600 V
Current - Collector (Ic) (Max) 60 A 60 A 60 A 76 A 24 A 60 A
Current - Collector Pulsed (Icm) 120 A 120 A 120 A 152 A 48 A 120 A
Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 32A 2.5V @ 15V, 32A 2.3V @ 15V, 32A 1.7V @ 15V, 39A 2.1V @ 15V, 12A 1.8V @ 15V, 30A
Power - Max 200 W 200 W 200 W 200 W 100 W 200 W
Switching Energy 600µJ (off) 320µJ (off) 600µJ (off) 4mJ (off) 500µJ (off) 1mJ (off)
Input Type Standard Standard Standard Standard Standard Standard
Gate Charge 110 nC 110 nC 110 nC 110 nC 32 nC 110 nC
Td (on/off) @ 25°C 25ns/100ns 25ns/85ns 25ns/100ns 25ns/250ns 20ns/150ns 25ns/130ns
Test Condition 480V, 32A, 4.7Ohm, 15V 480V, 32A, 4.7Ohm, 15V 480V, 32A, 4.7Ohm, 15V 480V, 39A, 4.7Ohm, 15V 480V, 12A, 18Ohm, 15V 480V, 30A, 4.7Ohm, 15V
Reverse Recovery Time (trr) 25 ns 25 ns 50 ns 25 ns 35 ns 25 ns
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3
Supplier Device Package TO-247AD TO-247AD TO-247AD TO-247AD TO-247AD TO-247AD

Related Product By Categories

RJP3047DPK-80#T2
RJP3047DPK-80#T2
Renesas Electronics America Inc
HIGH SPEED IGBT
STGW20H65FB
STGW20H65FB
STMicroelectronics
IGBT 650V 40A 168W TO247
AOK30B120D2
AOK30B120D2
Alpha & Omega Semiconductor Inc.
IGBT 1200V 30A TO-247
IXYT30N65C3H1HV
IXYT30N65C3H1HV
IXYS
IGBT 650V 60A 270W TO268HV
IXGA7N60BD1
IXGA7N60BD1
IXYS
IGBT 600V 14A 80W TO263
IXGK28N140B3H1
IXGK28N140B3H1
IXYS
IGBT 1400V 60A 300W TO264
IRGR3B60KD2TRRP
IRGR3B60KD2TRRP
Infineon Technologies
IGBT 600V 7.8A 52W DPAK
IRGB4062DPBF
IRGB4062DPBF
Infineon Technologies
IGBT TRENCH 600V 48A TO220AB
IRG4PC50FD-EPBF
IRG4PC50FD-EPBF
Infineon Technologies
IGBT 600V 70A 200W TO247AD
AUIRGP35B60PD
AUIRGP35B60PD
Infineon Technologies
IGBT 600V 60A 308W TO247AC
NGB8245NT4G
NGB8245NT4G
Littelfuse Inc.
IGBT 490V 20A 150W D2PAK3
RGWSX2TS65DGC13
RGWSX2TS65DGC13
Rohm Semiconductor
HIGH-SPEED FAST SWITCHING TYPE,

Related Product By Brand

DSEK60-02A
DSEK60-02A
IXYS
DIODE ARRAY GP 200V 34A TO247AD
IXFH30N50P
IXFH30N50P
IXYS
MOSFET N-CH 500V 30A TO247AD
IXTA62N15P
IXTA62N15P
IXYS
MOSFET N-CH 150V 62A TO263
IXTT140N10P
IXTT140N10P
IXYS
MOSFET N-CH 100V 140A TO268
IXFN44N80P
IXFN44N80P
IXYS
MOSFET N-CH 800V 39A SOT-227B
IXTA08N100D2HV
IXTA08N100D2HV
IXYS
MOSFET N-CH 1000V 800MA TO263HV
IXTA380N036T4-7
IXTA380N036T4-7
IXYS
MOSFET N-CH 36V 380A TO263-7
IXFT60N50P3
IXFT60N50P3
IXYS
MOSFET N-CH 500V 60A TO268
IXFN150N15
IXFN150N15
IXYS
MOSFET N-CH 150V 150A SOT227B
IXFH14N60P3
IXFH14N60P3
IXYS
MOSFET N-CH 600V 14A TO247AD
IXSH25N120AU1
IXSH25N120AU1
IXYS
IGBT 1200V 50A 200W TO247
IXBD4410PI
IXBD4410PI
IXYS
IC GATE DRVR LOW-SIDE 16DIP