IXGH30N60BD1
  • Share:

IXYS IXGH30N60BD1

Manufacturer No:
IXGH30N60BD1
Manufacturer:
IXYS
Package:
Bulk
Datasheet:
IXGH30N60BD1 Datasheet
ECAD Model:
-
Description:
IGBT 600V 60A 200W TO247
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

IGBT Type:- 
Voltage - Collector Emitter Breakdown (Max):600 V
Current - Collector (Ic) (Max):60 A
Current - Collector Pulsed (Icm):120 A
Vce(on) (Max) @ Vge, Ic:1.8V @ 15V, 30A
Power - Max:200 W
Switching Energy:1mJ (off)
Input Type:Standard
Gate Charge:110 nC
Td (on/off) @ 25°C:25ns/130ns
Test Condition:480V, 30A, 4.7Ohm, 15V
Reverse Recovery Time (trr):25 ns
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-247-3
Supplier Device Package:TO-247AD
0 Remaining View Similar

In Stock

-
31

Please send RFQ , we will respond immediately.

Similar Products

Part Number IXGH30N60BD1 IXGH30N60BU1   IXGH32N60BD1   IXGH39N60BD1   IXGH20N60BD1   IXGH30N60B2D1  
Manufacturer IXYS IXYS IXYS IXYS IXYS IXYS
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
IGBT Type - - - - - PT
Voltage - Collector Emitter Breakdown (Max) 600 V 600 V 600 V 600 V 600 V 600 V
Current - Collector (Ic) (Max) 60 A 60 A 60 A 76 A 40 A 70 A
Current - Collector Pulsed (Icm) 120 A 120 A 120 A 152 A 80 A 150 A
Vce(on) (Max) @ Vge, Ic 1.8V @ 15V, 30A 1.8V @ 15V, 30A 2.3V @ 15V, 32A 1.7V @ 15V, 39A 2V @ 15V, 20A 1.8V @ 15V, 24A
Power - Max 200 W 200 W 200 W 200 W 150 W 190 W
Switching Energy 1mJ (off) 1mJ (off) 600µJ (off) 4mJ (off) 700µJ (off) 320µJ (off)
Input Type Standard Standard Standard Standard Standard Standard
Gate Charge 110 nC 110 nC 110 nC 110 nC 55 nC 66 nC
Td (on/off) @ 25°C 25ns/130ns 25ns/130ns 25ns/100ns 25ns/250ns 15ns/110ns 13ns/110ns
Test Condition 480V, 30A, 4.7Ohm, 15V 480V, 30A, 4.7Ohm, 15V 480V, 32A, 4.7Ohm, 15V 480V, 39A, 4.7Ohm, 15V 480V, 20A, 10Ohm, 15V 400V, 24A, 5Ohm, 15V
Reverse Recovery Time (trr) 25 ns 50 ns 25 ns 25 ns 25 ns 25 ns
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3
Supplier Device Package TO-247AD TO-247AD TO-247AD TO-247AD TO-247AD TO-247AD

Related Product By Categories

FGA40N65SMD
FGA40N65SMD
onsemi
IGBT FIELD STOP 650V 80A TO3PN
IKD15N60RC2ATMA1
IKD15N60RC2ATMA1
Infineon Technologies
IKD15N60RC2ATMA1
STGD3NB60FT4
STGD3NB60FT4
STMicroelectronics
IGBT 600V 6A 60W DPAK
AIKB30N65DH5ATMA1
AIKB30N65DH5ATMA1
Infineon Technologies
DISCRETE SWITCHES
STGW100H65FB2-4
STGW100H65FB2-4
STMicroelectronics
TRENCH GATE FIELD-STOP, 650 V, 1
IXXH150N60C3
IXXH150N60C3
IXYS
IGBT 600V TO247
IXYH40N90C3
IXYH40N90C3
IXYS
IGBT 900V 105A 600W TO247
IXGH36N60B3
IXGH36N60B3
IXYS
IGBT 600V 92A 250W TO247
IXXH40N65B4H1
IXXH40N65B4H1
IXYS
IGBT 650V 120A 455W TO247AD
IXGX82N120A3
IXGX82N120A3
IXYS
IGBT 1200V 260A 1250W PLUS247
IXBA14N300HV
IXBA14N300HV
IXYS
REVERSE CONDUCTING IGBT
IRGS4610DTRLPBF
IRGS4610DTRLPBF
Infineon Technologies
IGBT 600V 16A 77W D2PAK

Related Product By Brand

VUO35-16NO7
VUO35-16NO7
IXYS
BRIDGE RECT 3P 1.6KV 38A PWS-A
DSSK18-0025BS-TUB
DSSK18-0025BS-TUB
IXYS
POWER DIODE DISCRETES-SCHOTTKY T
DSEP12-12B
DSEP12-12B
IXYS
DIODE GEN PURP 1.2KV 15A TO220AC
DLA10IM800UC-TRL
DLA10IM800UC-TRL
IXYS
DIODE GEN PURP 800V 10A TO252
IXFH46N65X3
IXFH46N65X3
IXYS
MOSFET 46A 650V X3 TO247
IXTN240N075L2
IXTN240N075L2
IXYS
MOSFET N-CH 75V 225A SOT227B
IXTT3N200P3HV
IXTT3N200P3HV
IXYS
MOSFET N-CH 2000V 3A TO268
IXTA3N120HV
IXTA3N120HV
IXYS
MOSFET N-CH 1200V 3A TO263
IXFT30N60P
IXFT30N60P
IXYS
MOSFET N-CH 600V 30A TO268
IXFK15N100Q
IXFK15N100Q
IXYS
MOSFET N-CH 1000V 15A TO264AA
IXGR40N60BD1
IXGR40N60BD1
IXYS
IGBT 600V 70A 200W ISOPLUS247
IXGR40N60B
IXGR40N60B
IXYS
IGBT 600V 70A 200W ISOPLUS247