IXGH30N60B2D1
  • Share:

IXYS IXGH30N60B2D1

Manufacturer No:
IXGH30N60B2D1
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXGH30N60B2D1 Datasheet
ECAD Model:
-
Description:
IGBT 600V 70A 190W TO247AD
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

IGBT Type:PT
Voltage - Collector Emitter Breakdown (Max):600 V
Current - Collector (Ic) (Max):70 A
Current - Collector Pulsed (Icm):150 A
Vce(on) (Max) @ Vge, Ic:1.8V @ 15V, 24A
Power - Max:190 W
Switching Energy:320µJ (off)
Input Type:Standard
Gate Charge:66 nC
Td (on/off) @ 25°C:13ns/110ns
Test Condition:400V, 24A, 5Ohm, 15V
Reverse Recovery Time (trr):25 ns
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-247-3
Supplier Device Package:TO-247AD
0 Remaining View Similar

In Stock

-
525

Please send RFQ , we will respond immediately.

Similar Products

Part Number IXGH30N60B2D1 IXGH30N60BD1   IXGH30N60C2D1   IXGH40N60B2D1  
Manufacturer IXYS IXYS IXYS IXYS
Product Status Obsolete Obsolete Obsolete Obsolete
IGBT Type PT - PT PT
Voltage - Collector Emitter Breakdown (Max) 600 V 600 V 600 V 600 V
Current - Collector (Ic) (Max) 70 A 60 A 70 A 75 A
Current - Collector Pulsed (Icm) 150 A 120 A 150 A 200 A
Vce(on) (Max) @ Vge, Ic 1.8V @ 15V, 24A 1.8V @ 15V, 30A 2.7V @ 15V, 24A 1.7V @ 15V, 30A
Power - Max 190 W 200 W 190 W 300 W
Switching Energy 320µJ (off) 1mJ (off) 190µJ (off) 400µJ (off)
Input Type Standard Standard Standard Standard
Gate Charge 66 nC 110 nC 70 nC 100 nC
Td (on/off) @ 25°C 13ns/110ns 25ns/130ns 13ns/70ns 18ns/130ns
Test Condition 400V, 24A, 5Ohm, 15V 480V, 30A, 4.7Ohm, 15V 400V, 24A, 5Ohm, 15V 400V, 30A, 3.3Ohm, 15V
Reverse Recovery Time (trr) 25 ns 25 ns 25 ns 25 ns
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Package / Case TO-247-3 TO-247-3 TO-247-3 TO-247-3
Supplier Device Package TO-247AD TO-247AD TO-247AD TO-247AD

Related Product By Categories

IGTM10N50
IGTM10N50
Harris Corporation
N CHANNEL IGBT FOR SWITCHING APP
IKW30N60H3FKSA1
IKW30N60H3FKSA1
Infineon Technologies
IGBT 600V 60A 187W TO247-3
IKW25N120T2XK
IKW25N120T2XK
Infineon Technologies
IGBT, 50A, 1200V, N-CHANNEL
IXYP10N65C3D1
IXYP10N65C3D1
IXYS
IGBT 650V 30A 160W TO-220
IXGH32N60BU1
IXGH32N60BU1
IXYS
IGBT 600V 60A 200W TO247AD
IRG4IBC30SPBF
IRG4IBC30SPBF
Infineon Technologies
IGBT 600V 23.5A 45W TO220FP
IXGR48N60B3D4A
IXGR48N60B3D4A
IXYS
IGBT 600V ISOPLUS247
GT10G131(TE12L,Q)
GT10G131(TE12L,Q)
Toshiba Semiconductor and Storage
IGBT 400V 1W 8-SOIC
IXGH12N60BD1
IXGH12N60BD1
IXYS
IGBT 600V 24A 100W TO247AD
IRG7PH30K10PBF
IRG7PH30K10PBF
Infineon Technologies
IGBT 1200V 33A 210W TO247AC
NGTB30N135IHRWG
NGTB30N135IHRWG
onsemi
IGBT TRENCH/FS 1350V 60A TO247
RGS00TS65EHRC11
RGS00TS65EHRC11
Rohm Semiconductor
8US SHORT-CIRCUIT TOLERANCE, 650

Related Product By Brand

DSEK60-12A
DSEK60-12A
IXYS
DIODE ARRAY GP 1200V 26A TO247AD
DS2-12A
DS2-12A
IXYS
DIODE GEN PURP 1.2KV 3.6A AXIAL
IXTY8N70X2
IXTY8N70X2
IXYS
MOSFET N-CHANNEL 700V 8A TO252
IXTA120P065T
IXTA120P065T
IXYS
MOSFET P-CH 65V 120A TO263
IXFH30N85X
IXFH30N85X
IXYS
MOSFET N-CH 850V 30A TO247AD
IXFH4N100Q
IXFH4N100Q
IXYS
MOSFET N-CH 1000V 4A TO247AD
IXFP4N100Q
IXFP4N100Q
IXYS
MOSFET N-CH 1000V 4A TO220AB
IXFT14N100
IXFT14N100
IXYS
MOSFET N-CH 1000V 14A TO268
IXTH14N100
IXTH14N100
IXYS
MOSFET N-CH 1000V 14A TO247
IXTH30N25
IXTH30N25
IXYS
MOSFET N-CH 250V 30A TO247
IXFP7N60P3
IXFP7N60P3
IXYS
MOSFET N-CH 600V 7A TO220AB
IXGT31N60D1
IXGT31N60D1
IXYS
IGBT 600V 60A 150W TO268