IXYS-IXGF32N170 - Transistors - IGBTs - Single Product Specifications and Latest Quotes

IGBT Type:	NPT
Voltage - Collector Emitter Breakdown (Max):	1700 V
Current - Collector (Ic) (Max):	44 A
Current - Collector Pulsed (Icm):	200 A
Vce(on) (Max) @ Vge, Ic:	3.5V @ 15V, 32A
Power - Max:	200 W
Switching Energy:	10.6mJ (off)
Input Type:	Standard
Gate Charge:	146 nC
Td (on/off) @ 25°C:	45ns/270ns
Test Condition:	1020V, 32A, 2.7Ohm, 15V
Reverse Recovery Time (trr):	-
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	i4-Pac™-5 (3 Leads)
Supplier Device Package:	ISOPLUS i4-PAC™

IXYS IXGF32N170