IXYS-IXGB200N60B3 - Transistors - IGBTs - Single Product Specifications and Latest Quotes

IGBT Type:	PT
Voltage - Collector Emitter Breakdown (Max):	600 V
Current - Collector (Ic) (Max):	75 A
Current - Collector Pulsed (Icm):	600 A
Vce(on) (Max) @ Vge, Ic:	1.5V @ 15V, 100A
Power - Max:	1250 W
Switching Energy:	1.6mJ (on), 2.9mJ (off)
Input Type:	Standard
Gate Charge:	750 nC
Td (on/off) @ 25°C:	44ns/310ns
Test Condition:	300V, 100A, 1Ohm, 15V
Reverse Recovery Time (trr):	-
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-264-3, TO-264AA
Supplier Device Package:	PLUS264™

IXYS IXGB200N60B3