IXFZ520N075T2
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IXYS IXFZ520N075T2

Manufacturer No:
IXFZ520N075T2
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXFZ520N075T2 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 75V 465A DE475
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):75 V
Current - Continuous Drain (Id) @ 25°C:465A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.3mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:4V @ 8mA
Gate Charge (Qg) (Max) @ Vgs:545 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:41000 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):600W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DE475
Package / Case:6-SMD, Flat Leads
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$43.66
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Similar Products

Part Number IXFZ520N075T2 IXFX520N075T2  
Manufacturer IXYS IXYS
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 75 V 75 V
Current - Continuous Drain (Id) @ 25°C 465A (Tc) 520A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 1.3mOhm @ 100A, 10V 2.2mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 4V @ 8mA 5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs 545 nC @ 10 V 545 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 41000 pF @ 25 V 41000 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 600W (Tc) 1250W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Through Hole
Supplier Device Package DE475 PLUS247™-3
Package / Case 6-SMD, Flat Leads TO-247-3 Variant

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