IXFX64N50P
  • Share:

IXYS IXFX64N50P

Manufacturer No:
IXFX64N50P
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXFX64N50P Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 500V 64A PLUS247-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:64A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:85mOhm @ 32A, 10V
Vgs(th) (Max) @ Id:5.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs:150 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:8700 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):830W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PLUS247™-3
Package / Case:TO-247-3 Variant
0 Remaining View Similar

In Stock

$17.72
14

Please send RFQ , we will respond immediately.

Similar Products

Part Number IXFX64N50P IXFX64N60P  
Manufacturer IXYS IXYS
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V 600 V
Current - Continuous Drain (Id) @ 25°C 64A (Tc) 64A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 85mOhm @ 32A, 10V 96mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id 5.5V @ 8mA 5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs 150 nC @ 10 V 200 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 8700 pF @ 25 V 12000 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 830W (Tc) 1040W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package PLUS247™-3 PLUS247™-3
Package / Case TO-247-3 Variant TO-247-3 Variant

Related Product By Categories

AOSP21321
AOSP21321
Alpha & Omega Semiconductor Inc.
MOSFET P-CH 30V 11A 8SOIC
AONS21321
AONS21321
Alpha & Omega Semiconductor Inc.
MOSFET P-CH 30V 14A/24A 8DFN
NTD78N03R-035
NTD78N03R-035
onsemi
N-CHANNEL POWER MOSFET
BTS132E3045ANTMA1
BTS132E3045ANTMA1
Infineon Technologies
N-CHANNEL POWER MOSFET
IXTH140P10T
IXTH140P10T
IXYS
MOSFET P-CH 100V 140A TO247
FDP75N08
FDP75N08
Fairchild Semiconductor
MOSFET N-CH 75V 75A TO220-3
BUK763R8-80E,118
BUK763R8-80E,118
Nexperia USA Inc.
MOSFET N-CH 80V 120A D2PAK
IPP062NE7N3GXKSA1
IPP062NE7N3GXKSA1
Infineon Technologies
MOSFET N-CH 75V 80A TO220-3
IXFA180N10T2-TRL
IXFA180N10T2-TRL
IXYS
MOSFET N-CH 100V 180A TO263
SPI07N65C3HKSA1
SPI07N65C3HKSA1
Infineon Technologies
MOSFET N-CH 650V 7.3A TO262-3
SSM3J114TU(T5L,T)
SSM3J114TU(T5L,T)
Toshiba Semiconductor and Storage
MOSFET P-CH 20V 1.8A UFM
SI4654DY-T1-E3
SI4654DY-T1-E3
Vishay Siliconix
MOSFET N-CH 25V 28.6A 8SO

Related Product By Brand

MDD44-08N1B
MDD44-08N1B
IXYS
DIODE MODULE 800V 64A TO240AA
DSEI60-06A
DSEI60-06A
IXYS
DIODE GEN PURP 600V 60A TO247AD
MCD200-18IO1
MCD200-18IO1
IXYS
MOD THYRISTOR/DIODE 1800V Y4-M6
IXFP38N30X3
IXFP38N30X3
IXYS
MOSFET N-CH 300V 38A TO220
IXFB210N20P
IXFB210N20P
IXYS
MOSFET N-CH 200V 210A PLUS264
IXFN170N25X3
IXFN170N25X3
IXYS
MOSFET N-CH 250V 170A SOT227B
IXTH1N250
IXTH1N250
IXYS
MOSFET N-CH 2500V 1.5A TO-247AD
IXFN100N25
IXFN100N25
IXYS
MOSFET N-CH 250V 100A SOT-227B
IXYN100N65C3H1
IXYN100N65C3H1
IXYS
IGBT MOD 650V 166A 600W SOT227B
IXYH60N90C3
IXYH60N90C3
IXYS
IGBT 900V 140A 750W C3 TO-247
IXXH50N60C3D1
IXXH50N60C3D1
IXYS
IGBT 600V 100A 600W TO247AD
IXXH50N60B3D1
IXXH50N60B3D1
IXYS
IGBT 600V 120A 600W TO247