IXFX50N50
  • Share:

IXYS IXFX50N50

Manufacturer No:
IXFX50N50
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXFX50N50 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 500V 50A PLUS247-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:50A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:100mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:4.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs:330 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:9400 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):520W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PLUS247™-3
Package / Case:TO-247-3 Variant
0 Remaining View Similar

In Stock

-
74

Please send RFQ , we will respond immediately.

Similar Products

Part Number IXFX50N50 IXFX55N50  
Manufacturer IXYS IXYS
Product Status Active Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V 500 V
Current - Continuous Drain (Id) @ 25°C 50A (Tc) 55A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 100mOhm @ 25A, 10V 80mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id 4.5V @ 8mA 4.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs 330 nC @ 10 V 330 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 9400 pF @ 25 V 9400 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 520W (Tc) 625W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package PLUS247™-3 PLUS247™-3
Package / Case TO-247-3 Variant TO-247-3 Variant

Related Product By Categories

STD38NH02LT4
STD38NH02LT4
STMicroelectronics
MOSFET N-CH 24V 38A DPAK
PSMN011-60MSX
PSMN011-60MSX
Nexperia USA Inc.
MOSFET N-CH 60V 61A LFPAK33
RFP4N06
RFP4N06
Harris Corporation
N-CHANNEL POWER MOSFET
PJQ5440-AU_R2_000A1
PJQ5440-AU_R2_000A1
Panjit International Inc.
40V N-CHANNEL ENHANCEMENT MODE M
DMN3066LQ-13
DMN3066LQ-13
Diodes Incorporated
MOSFET BVDSS: 25V~30V SOT23 T&R
IRF610LPBF
IRF610LPBF
Vishay Siliconix
MOSFET N-CH 200V 3.3A I2PAK
IPB80P03P4L07ATMA1
IPB80P03P4L07ATMA1
Infineon Technologies
MOSFET P-CH 30V 80A TO263-3
TSM60NB380CF C0G
TSM60NB380CF C0G
Taiwan Semiconductor Corporation
MOSFET N-CH 600V 11A ITO220S
SPI10N10
SPI10N10
Infineon Technologies
MOSFET N-CH 100V 10.3A TO262-3
SI3460DV-T1-GE3
SI3460DV-T1-GE3
Vishay Siliconix
MOSFET N-CH 20V 5.1A 6TSOP
RQ3E120BNTB
RQ3E120BNTB
Rohm Semiconductor
MOSFET N-CH 30V 12A 8HSMT
SCT4036KRC15
SCT4036KRC15
Rohm Semiconductor
1200V, 36M, 4-PIN THD, TRENCH-ST

Related Product By Brand

VBO160-18NO7
VBO160-18NO7
IXYS
BRIDGE RECT 1P 1.8KV 174A PWS-E
DSEK60-02AR
DSEK60-02AR
IXYS
DIODE ARRAY 200V 34A ISOPLUS247
MDMA50P1200TG
MDMA50P1200TG
IXYS
DIODE MODULE 1.2KV 50A TO240AA
CLA40MT1200NPZ-TRL
CLA40MT1200NPZ-TRL
IXYS
THYRISTOR PHASE THRU TO263
IXFQ72N20X3
IXFQ72N20X3
IXYS
MOSFET N-CH 200V 72A TO3P
IXFN170N65X2
IXFN170N65X2
IXYS
MOSFET N-CH 650V 170A SOT227B
IXTQ36P15P
IXTQ36P15P
IXYS
MOSFET P-CH 150V 36A TO3P
IXFH14N60P
IXFH14N60P
IXYS
MOSFET N-CH 600V 14A TO247AD
IXTK100N25P
IXTK100N25P
IXYS
MOSFET N-CH 250V 100A TO264
IXFA14N85XHV
IXFA14N85XHV
IXYS
MOSFET N-CH 850V 14A TO263
IXGN120N60A3D1
IXGN120N60A3D1
IXYS
IGBT MOD 600V 200A 595W SOT227B
IXGH30N120C3H1
IXGH30N120C3H1
IXYS
IGBT 1200V 48A 250W TO247AD