IXFX200N10P
  • Share:

IXYS IXFX200N10P

Manufacturer No:
IXFX200N10P
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXFX200N10P Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 200A PLUS247-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:200A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:7.5mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs:235 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:7600 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):830W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PLUS247™-3
Package / Case:TO-247-3 Variant
0 Remaining View Similar

In Stock

$14.53
52

Please send RFQ , we will respond immediately.

Similar Products

Part Number IXFX200N10P IXFX250N10P  
Manufacturer IXYS IXYS
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 200A (Tc) 250A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 7.5mOhm @ 100A, 10V 6.5mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 5V @ 8mA 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 235 nC @ 10 V 205 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 7600 pF @ 25 V 16000 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 830W (Tc) 1250W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package PLUS247™-3 PLUS247™-3
Package / Case TO-247-3 Variant TO-247-3 Variant

Related Product By Categories

IRFH7084TRPBF
IRFH7084TRPBF
Infineon Technologies
MOSFET N-CH 40V 100A 8PQFN
2SK2045LS
2SK2045LS
onsemi
N-CHANNEL SILICON MOSFET
NTE2396
NTE2396
NTE Electronics, Inc
MOSFET N-CHANNEL 100V 28A TO220
STFI10N65K3
STFI10N65K3
STMicroelectronics
MOSFET N-CH 650V 10A I2PAKFP
IRLHS6342TRPBF
IRLHS6342TRPBF
Infineon Technologies
MOSFET N-CH 30V 8.7A/19A 6PQFN
GA50JT12-247
GA50JT12-247
GeneSiC Semiconductor
TRANS SJT 1200V 100A TO247AB
FDMA7672
FDMA7672
onsemi
MOSFET N-CH 30V 9A 6MICROFET
BUK9E06-55A,127
BUK9E06-55A,127
Nexperia USA Inc.
MOSFET N-CH 55V 75A I2PAK
IRFR3711TRR
IRFR3711TRR
Infineon Technologies
MOSFET N-CH 20V 100A DPAK
FQB19N10TM
FQB19N10TM
onsemi
MOSFET N-CH 100V 19A D2PAK
IRLR8103VTRLPBF
IRLR8103VTRLPBF
Infineon Technologies
MOSFET N-CH 30V 91A DPAK
RDD020N60TL
RDD020N60TL
Rohm Semiconductor
MOSFET N-CH 600V 2A CPT3

Related Product By Brand

MDD200-16N1
MDD200-16N1
IXYS
DIODE MODULE 1.6KV 224A Y4-M6
IXFB300N10P
IXFB300N10P
IXYS
MOSFET N-CH 100V 300A PLUS264
IXTA10P50P
IXTA10P50P
IXYS
MOSFET P-CH 500V 10A TO263
IXFK120N25P
IXFK120N25P
IXYS
MOSFET N-CH 250V 120A TO264AA
IXFC52N30P
IXFC52N30P
IXYS
MOSFET N-CH 300V 24A ISOPLUS220
IXTQ200N085T
IXTQ200N085T
IXYS
MOSFET N-CH 85V 200A TO3P
IXXH110N65C4
IXXH110N65C4
IXYS
IGBT 650V 234A 880W TO247AD
IXYX110N120C4
IXYX110N120C4
IXYS
IGBT 1200V 110A GEN4 XPT PLUS247
IXBH10N170
IXBH10N170
IXYS
IGBT 1700V 20A 140W TO247AD
IXGH40N60
IXGH40N60
IXYS
IGBT 600V 75A 250W TO247AD
IXGT24N170AH1
IXGT24N170AH1
IXYS
IGBT 1700V 24A 250W TO268
IXD611S7
IXD611S7
IXYS
IC GATE DRVR HALF-BRIDGE 14SOIC