IXFX180N25T
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IXYS IXFX180N25T

Manufacturer No:
IXFX180N25T
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXFX180N25T Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 250V 180A PLUS247-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):250 V
Current - Continuous Drain (Id) @ 25°C:180A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:12.9mOhm @ 60A, 10V
Vgs(th) (Max) @ Id:5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs:345 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:28000 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):1390W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PLUS247™-3
Package / Case:TO-247-3 Variant
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Similar Products

Part Number IXFX180N25T IXFX140N25T  
Manufacturer IXYS IXYS
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 250 V 250 V
Current - Continuous Drain (Id) @ 25°C 180A (Tc) 140A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 12.9mOhm @ 60A, 10V 17mOhm @ 60A, 10V
Vgs(th) (Max) @ Id 5V @ 8mA 5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs 345 nC @ 10 V 255 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 28000 pF @ 25 V 19000 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 1390W (Tc) 960W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package PLUS247™-3 PLUS247™-3
Package / Case TO-247-3 Variant TO-247-3 Variant

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