IXFX170N20P
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IXYS IXFX170N20P

Manufacturer No:
IXFX170N20P
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXFX170N20P Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 200V 170A PLUS247-3
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:170A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:14mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id:5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:185 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:11400 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):1250W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PLUS247™-3
Package / Case:TO-247-3 Variant
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Similar Products

Part Number IXFX170N20P IXFX170N20T  
Manufacturer IXYS IXYS
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V 200 V
Current - Continuous Drain (Id) @ 25°C 170A (Tc) 170A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 14mOhm @ 500mA, 10V 11mOhm @ 60A, 10V
Vgs(th) (Max) @ Id 5V @ 1mA 5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs 185 nC @ 10 V 265 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 11400 pF @ 25 V 19600 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 1250W (Tc) 1150W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package PLUS247™-3 PLUS247™-3
Package / Case TO-247-3 Variant TO-247-3 Variant

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