IXFX14N100
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IXYS IXFX14N100

Manufacturer No:
IXFX14N100
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXFX14N100 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 1000V 14A PLUS247-3
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):1000 V
Current - Continuous Drain (Id) @ 25°C:14A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:750mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id:4.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs:220 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4500 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):360W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PLUS247™-3
Package / Case:TO-247-3 Variant
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Similar Products

Part Number IXFX14N100 IXFX24N100   IXFX15N100  
Manufacturer IXYS IXYS IXYS
Product Status Obsolete Not For New Designs Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000 V 1000 V 1000 V
Current - Continuous Drain (Id) @ 25°C 14A (Tc) 24A (Tc) 15A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 750mOhm @ 500mA, 10V 390mOhm @ 12A, 10V 700mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id 4.5V @ 4mA 5.5V @ 8mA 4.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs 220 nC @ 10 V 267 nC @ 10 V 220 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 4500 pF @ 25 V 8700 pF @ 25 V 4500 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 360W (Tc) 560W (Tc) 360W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package PLUS247™-3 PLUS247™-3 PLUS247™-3
Package / Case TO-247-3 Variant TO-247-3 Variant TO-247-3 Variant

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