IXFV22N50P
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IXYS IXFV22N50P

Manufacturer No:
IXFV22N50P
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXFV22N50P Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 500V 22A PLUS220
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:22A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:270mOhm @ 11A, 10V
Vgs(th) (Max) @ Id:5.5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs:50 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:2630 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):350W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PLUS220
Package / Case:TO-220-3, Short Tab
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Similar Products

Part Number IXFV22N50P IXFV26N50P   IXFV22N60P  
Manufacturer IXYS IXYS IXYS
Product Status Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V 500 V 600 V
Current - Continuous Drain (Id) @ 25°C 22A (Tc) 26A (Tc) 22A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 270mOhm @ 11A, 10V 230mOhm @ 13A, 10V 350mOhm @ 11A, 10V
Vgs(th) (Max) @ Id 5.5V @ 2.5mA 5.5V @ 4mA 5.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs 50 nC @ 10 V 60 nC @ 10 V 58 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 2630 pF @ 25 V 3600 pF @ 25 V 3600 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 350W (Tc) 400W (Tc) 400W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package PLUS220 PLUS220 PLUS220
Package / Case TO-220-3, Short Tab TO-220-3, Short Tab TO-220-3, Short Tab

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