IXFV20N80P
  • Share:

IXYS IXFV20N80P

Manufacturer No:
IXFV20N80P
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXFV20N80P Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 800V 20A PLUS220
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:20A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:520mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs:86 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:4685 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):500W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PLUS220
Package / Case:TO-220-3, Short Tab
0 Remaining View Similar

In Stock

-
539

Please send RFQ , we will respond immediately.

Similar Products

Part Number IXFV20N80P IXFT20N80P  
Manufacturer IXYS IXYS
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V 800 V
Current - Continuous Drain (Id) @ 25°C 20A (Tc) 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 520mOhm @ 10A, 10V 520mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 5V @ 4mA 5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs 86 nC @ 10 V 86 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 4685 pF @ 25 V 4685 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 500W (Tc) 500W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Surface Mount
Supplier Device Package PLUS220 TO-268AA
Package / Case TO-220-3, Short Tab TO-268-3, D³Pak (2 Leads + Tab), TO-268AA

Related Product By Categories

NTD30N02T4G
NTD30N02T4G
onsemi
N-CHANNEL POWER MOSFET
AON7528
AON7528
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 30V 45A/50A 8DFN
AON7400A
AON7400A
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 30V 15A/40A 8DFN
TP5322K1-G
TP5322K1-G
Microchip Technology
MOSFET P-CH 220V 120MA TO236AB
IRF1310NSPBF-INF
IRF1310NSPBF-INF
Infineon Technologies
HEXFET POWER MOSFET
NTMT190N65S3H
NTMT190N65S3H
onsemi
POWER MOSFET, N-CHANNEL, SUPERFE
SPP02N80C3XKSA1
SPP02N80C3XKSA1
Infineon Technologies
MOSFET N-CH 800V 2A TO220-3
IRF7457PBF
IRF7457PBF
Infineon Technologies
MOSFET N-CH 20V 15A 8SO
BSC052N03S G
BSC052N03S G
Infineon Technologies
MOSFET N-CH 30V 18A/80A TDSON
TPC8018-H(TE12LQM)
TPC8018-H(TE12LQM)
Toshiba Semiconductor and Storage
MOSFET N-CH 30V 18A 8SOP
NVMFS5C410NLWFT1G
NVMFS5C410NLWFT1G
onsemi
MOSFET N-CH 40V 48A/315A 5DFN
R6504END3TL1
R6504END3TL1
Rohm Semiconductor
650V 4A TO-252, LOW-NOISE POWER

Related Product By Brand

DSEI2X30-12B
DSEI2X30-12B
IXYS
DIODE MODULE 1.2KV 28A SOT227B
MCD40-16IO6
MCD40-16IO6
IXYS
MOD THYRISTOR/DIO 1600V SOT-227B
IXTH12N65X2
IXTH12N65X2
IXYS
MOSFET N-CH 650V 12A TO247-3
IXFN150N10
IXFN150N10
IXYS
MOSFET N-CH 100V 150A SOT-227
IXTP200N075T
IXTP200N075T
IXYS
MOSFET N-CH 75V 200A TO220AB
IXTN79N20
IXTN79N20
IXYS
MOSFET N-CH 200V 85A SOT227B
IXGN80N60A2D1
IXGN80N60A2D1
IXYS
IGBT MOD 600V 160A 625W SOT227B
IXGT32N120A3
IXGT32N120A3
IXYS
IGBT 1200V 75A 300W TO268
IXGR40N60C2
IXGR40N60C2
IXYS
IGBT 600V 56A 170W ISOPLUS247
IXGX55N120A3D1
IXGX55N120A3D1
IXYS
IGBT PLUS247
IXCP30M35
IXCP30M35
IXYS
IC CURRENT REGULATOR TO220AB
IXDN514PI
IXDN514PI
IXYS
IC GATE DRVR LOW-SIDE 8DIP