IXFV20N80P
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IXYS IXFV20N80P

Manufacturer No:
IXFV20N80P
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXFV20N80P Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 800V 20A PLUS220
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:20A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:520mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs:86 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:4685 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):500W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PLUS220
Package / Case:TO-220-3, Short Tab
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Similar Products

Part Number IXFV20N80P IXFT20N80P  
Manufacturer IXYS IXYS
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V 800 V
Current - Continuous Drain (Id) @ 25°C 20A (Tc) 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 520mOhm @ 10A, 10V 520mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 5V @ 4mA 5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs 86 nC @ 10 V 86 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 4685 pF @ 25 V 4685 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 500W (Tc) 500W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Surface Mount
Supplier Device Package PLUS220 TO-268AA
Package / Case TO-220-3, Short Tab TO-268-3, D³Pak (2 Leads + Tab), TO-268AA

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