IXFV18N60P
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IXYS IXFV18N60P

Manufacturer No:
IXFV18N60P
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXFV18N60P Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 600V 18A PLUS220
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:18A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:400mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id:5.5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs:50 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:2500 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):360W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PLUS220
Package / Case:TO-220-3, Short Tab
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Similar Products

Part Number IXFV18N60P IXFV18N90P  
Manufacturer IXYS IXYS
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 900 V
Current - Continuous Drain (Id) @ 25°C 18A (Tc) 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 400mOhm @ 500mA, 10V 600mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id 5.5V @ 2.5mA 6.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 50 nC @ 10 V 97 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 2500 pF @ 25 V 5230 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 360W (Tc) 540W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package PLUS220 PLUS220
Package / Case TO-220-3, Short Tab TO-220-3, Short Tab

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