IXFT80N085
  • Share:

IXYS IXFT80N085

Manufacturer No:
IXFT80N085
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXFT80N085 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 85V 80A TO268
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):85 V
Current - Continuous Drain (Id) @ 25°C:80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:9mOhm @ 40A, 10V
Vgs(th) (Max) @ Id:4V @ 4mA
Gate Charge (Qg) (Max) @ Vgs:180 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4800 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):300W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-268AA
Package / Case:TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
0 Remaining View Similar

In Stock

-
303

Please send RFQ , we will respond immediately.

Similar Products

Part Number IXFT80N085 IXFT80N08  
Manufacturer IXYS IXYS
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 85 V 80 V
Current - Continuous Drain (Id) @ 25°C 80A (Tc) 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 9mOhm @ 40A, 10V 9mOhm @ 40A, 10V
Vgs(th) (Max) @ Id 4V @ 4mA 4V @ 4mA
Gate Charge (Qg) (Max) @ Vgs 180 nC @ 10 V 180 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 4800 pF @ 25 V 4800 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 300W (Tc) 300W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package TO-268AA TO-268AA
Package / Case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA TO-268-3, D³Pak (2 Leads + Tab), TO-268AA

Related Product By Categories

NX7002AK,215
NX7002AK,215
Nexperia USA Inc.
MOSFET N-CH 60V 190MA TO236AB
IRFD110PBF
IRFD110PBF
Vishay Siliconix
MOSFET N-CH 100V 1A 4DIP
JDX5010
JDX5010
onsemi
NFET T0220FP JPN
FDB8160-F085
FDB8160-F085
Fairchild Semiconductor
80A, 30V, 0.0018OHM, N-CHANNEL,
FDN336P
FDN336P
onsemi
MOSFET P-CH 20V 1.3A SUPERSOT3
SIJ188DP-T1-GE3
SIJ188DP-T1-GE3
Vishay Siliconix
MOSFET N-CH 60V 25.5A/92.4A PPAK
IPD65R250E6
IPD65R250E6
Infineon Technologies
N-CHANNEL POWER MOSFET
SIS426DN-T1-GE3
SIS426DN-T1-GE3
Vishay Siliconix
MOSFET N-CH 20V 35A PPAK1212-8
IPI120N06S4H1AKSA1
IPI120N06S4H1AKSA1
Infineon Technologies
MOSFET N-CH 60V 120A TO262-3
SSM3K301T(TE85L,F)
SSM3K301T(TE85L,F)
Toshiba Semiconductor and Storage
MOSFET N-CH 20V 3.5A TSM
RRR030P03HZGTL
RRR030P03HZGTL
Rohm Semiconductor
MOSFET P-CH 30V 3A TSMT3
RSS060P05FRATB
RSS060P05FRATB
Rohm Semiconductor
MOSFET P-CH 45V 6A 8SOP

Related Product By Brand

DSEP29-06B
DSEP29-06B
IXYS
DIODE GEN PURP 600V 30A TO220AC
DSEP30-06CR
DSEP30-06CR
IXYS
DIODE GP 600V 30A ISOPLUS247
IXTP8N65X2M
IXTP8N65X2M
IXYS
MOSFET N-CH 650V 4A TO220
IXTA52P10P
IXTA52P10P
IXYS
MOSFET P-CH 100V 52A TO263
IXTA110N055T2
IXTA110N055T2
IXYS
MOSFET N-CH 55V 110A TO263
IXTQ82N25P
IXTQ82N25P
IXYS
MOSFET N-CH 250V 82A TO3P
IXFH15N60
IXFH15N60
IXYS
MOSFET N-CH 600V 15A TO-247AD
IXTH36N20T
IXTH36N20T
IXYS
MOSFET N-CH 200V 36A TO247
IXFR16N80P
IXFR16N80P
IXYS
MOSFET N-CH ISOPLUS247
IXGH120N30B3
IXGH120N30B3
IXYS
IGBT 300V 75A 540W TO247
IXGH30N60C2D1
IXGH30N60C2D1
IXYS
IGBT 600V 70A 190W TO247
IXGP20N120B
IXGP20N120B
IXYS
IGBT 1200V 40A 190W TO220