IXFT6N100Q
  • Share:

IXYS IXFT6N100Q

Manufacturer No:
IXFT6N100Q
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXFT6N100Q Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 1000V 6A TO268
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):1000 V
Current - Continuous Drain (Id) @ 25°C:6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.9Ohm @ 3A, 10V
Vgs(th) (Max) @ Id:4.5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs:48 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2200 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):180W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-268AA
Package / Case:TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
0 Remaining View Similar

In Stock

-
465

Please send RFQ , we will respond immediately.

Similar Products

Part Number IXFT6N100Q IXFT4N100Q   IXFT6N100F  
Manufacturer IXYS IXYS IXYS
Product Status Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000 V 1000 V 1000 V
Current - Continuous Drain (Id) @ 25°C 6A (Tc) 4A (Tc) 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 1.9Ohm @ 3A, 10V 3Ohm @ 2A, 10V 1.9Ohm @ 3A, 10V
Vgs(th) (Max) @ Id 4.5V @ 2.5mA 5V @ 1.5mA 5.5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs 48 nC @ 10 V 39 nC @ 10 V 54 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2200 pF @ 25 V 1050 pF @ 25 V 1770 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 180W (Tc) 150W (Tc) 180W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package TO-268AA TO-268AA TO-268
Package / Case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA TO-268-3, D³Pak (2 Leads + Tab), TO-268AA TO-268-3, D³Pak (2 Leads + Tab), TO-268AA

Related Product By Categories

CSD19537Q3
CSD19537Q3
Texas Instruments
MOSFET N-CH 100V 9.7A/50A 8VSON
DMT6016LFDF-7
DMT6016LFDF-7
Diodes Incorporated
MOSFET N-CH 60V 8.9A 6UDFN
FQU10N20CTU
FQU10N20CTU
onsemi
MOSFET N-CH 200V 7.8A IPAK
DMP2035UVTQ-7
DMP2035UVTQ-7
Diodes Incorporated
MOSFET P-CH 20V 7.2A TSOT26
IRFBG30
IRFBG30
Vishay Siliconix
MOSFET N-CH 1000V 3.1A TO220AB
IRFI9520G
IRFI9520G
Vishay Siliconix
MOSFET P-CH 100V 5.2A TO220-3
IRLR3103TRRPBF
IRLR3103TRRPBF
Infineon Technologies
MOSFET N-CH 30V 55A DPAK
IPD90N06S407ATMA1
IPD90N06S407ATMA1
Infineon Technologies
MOSFET N-CH 60V 90A TO252-3
NDD60N360U1-35G
NDD60N360U1-35G
onsemi
MOSFET N-CH 600V 11A IPAK
AOB20C60PL
AOB20C60PL
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 600V 20A TO263
IPI084N06L3GXKSA1
IPI084N06L3GXKSA1
Infineon Technologies
MOSFET N-CH 60V 50A TO262-3
FQP13N50C_F105
FQP13N50C_F105
onsemi
MOSFET N-CH 500V 13A TO220-3

Related Product By Brand

MDMA110P1600TG
MDMA110P1600TG
IXYS
DIODE MODULE 1.6KV 110A TO240AA
MCD40-12IO6
MCD40-12IO6
IXYS
MOD THYRISTOR/DIO 1200V SOT-227B
VMM300-03F
VMM300-03F
IXYS
MOSFET 2N-CH 300V 290A Y3-DCB
IXTA32P20T
IXTA32P20T
IXYS
MOSFET P-CH 200V 32A TO263
IXTT3N200P3HV
IXTT3N200P3HV
IXYS
MOSFET N-CH 2000V 3A TO268
IXFX230N20T
IXFX230N20T
IXYS
MOSFET N-CH 200V 230A PLUS247-3
IXTP1R4N120P
IXTP1R4N120P
IXYS
MOSFET N-CH 1200V 1.4A TO220AB
IXTH220N20X4
IXTH220N20X4
IXYS
MOSFET N-CH 200V 220A X4 TO-247
IXFA3N120-TRL
IXFA3N120-TRL
IXYS
MOSFET N-CH 1200V 3A TO263
IXTP1N80
IXTP1N80
IXYS
MOSFET N-CH 800V 750MA TO220AB
IXTU55N075T
IXTU55N075T
IXYS
MOSFET N-CH 75V 55A TO251
IXYH40N65C3D1
IXYH40N65C3D1
IXYS
IGBT 650V 80A 300W TO247