IXFT6N100F
  • Share:

IXYS IXFT6N100F

Manufacturer No:
IXFT6N100F
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXFT6N100F Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 1000V 6A TO268
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):1000 V
Current - Continuous Drain (Id) @ 25°C:6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.9Ohm @ 3A, 10V
Vgs(th) (Max) @ Id:5.5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs:54 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1770 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):180W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-268
Package / Case:TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
0 Remaining View Similar

In Stock

-
206

Please send RFQ , we will respond immediately.

Similar Products

Part Number IXFT6N100F IXFT6N100Q  
Manufacturer IXYS IXYS
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000 V 1000 V
Current - Continuous Drain (Id) @ 25°C 6A (Tc) 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 1.9Ohm @ 3A, 10V 1.9Ohm @ 3A, 10V
Vgs(th) (Max) @ Id 5.5V @ 2.5mA 4.5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs 54 nC @ 10 V 48 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1770 pF @ 25 V 2200 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 180W (Tc) 180W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package TO-268 TO-268AA
Package / Case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA TO-268-3, D³Pak (2 Leads + Tab), TO-268AA

Related Product By Categories

CSD13381F4
CSD13381F4
Texas Instruments
MOSFET N-CH 12V 2.1A 3PICOSTAR
BUK9514-55A,127
BUK9514-55A,127
NXP USA Inc.
PFET, 73A I(D), 55V, 0.015OHM, 1
FCA20N60
FCA20N60
Fairchild Semiconductor
20A, 600V, 0.19OHM, N-CHANNEL,
LH7A400N0G000B5
LH7A400N0G000B5
Rochester Electronics, LLC
LH7A400 - 32-BIT SYSTEM-ON-CHIP
DMP3098L-7
DMP3098L-7
Diodes Incorporated
MOSFET P-CH 30V 3.8A SOT23-3
SPA07N60C3XKSA1
SPA07N60C3XKSA1
Infineon Technologies
MOSFET N-CH 650V 7.3A TO220-FP
P2N2369ZL1G
P2N2369ZL1G
onsemi
SS T092 GP XSTR NPN SPCL
DMT6013LSS-13
DMT6013LSS-13
Diodes Incorporated
MOSFET N-CH 60V 10A 8SO
NTMFS5H409NLT3G
NTMFS5H409NLT3G
onsemi
MOSFET N-CH 40V 41A/270A 5DFN
PSMN2R0-60PSRQ
PSMN2R0-60PSRQ
Nexperia USA Inc.
MOSFET N-CH 60V 120A TO220AB
IRF614L
IRF614L
Vishay Siliconix
MOSFET N-CH 250V 2.7A TO262
IRFS11N50ATRR
IRFS11N50ATRR
Vishay Siliconix
MOSFET N-CH 500V 11A D2PAK

Related Product By Brand

MCC21-16IO8B
MCC21-16IO8B
IXYS
MOD THYRISTOR DUAL 1600V TO240AA
MCC72-08IO8B
MCC72-08IO8B
IXYS
MOD THYRISTOR DUAL 800V TO-240AA
IXFH36N50P
IXFH36N50P
IXYS
MOSFET N-CH 500V 36A TO247AD
IXTY08N100P
IXTY08N100P
IXYS
MOSFET N-CH 1000V 800MA TO252
IXFT44N50P
IXFT44N50P
IXYS
MOSFET N-CH 500V 44A TO268
IXTP7N60P
IXTP7N60P
IXYS
MOSFET N-CH 600V 7A TO220AB
IXYN100N120C3
IXYN100N120C3
IXYS
IGBT MOD 1200V 152A 830W SOT227B
IXER35N120D1
IXER35N120D1
IXYS
IGBT 1200V 50A 200W TO247
IXDH30N120
IXDH30N120
IXYS
IGBT 1200V 60A 300W TO247AD
IXDE514SIA
IXDE514SIA
IXYS
IC GATE DRVR LOW-SIDE 8SOIC
IXMS150PSI
IXMS150PSI
IXYS
IC REG CTRLR HALF-BRIDGE 24DIP