IXFT58N20
  • Share:

IXYS IXFT58N20

Manufacturer No:
IXFT58N20
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXFT58N20 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 200V 58A TO268
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:58A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:40mOhm @ 29A, 10V
Vgs(th) (Max) @ Id:4V @ 4mA
Gate Charge (Qg) (Max) @ Vgs:220 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4400 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):300W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-268AA
Package / Case:TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
0 Remaining View Similar

In Stock

-
51

Please send RFQ , we will respond immediately.

Similar Products

Part Number IXFT58N20 IXFT58N20Q   IXFR58N20   IXFT50N20  
Manufacturer IXYS IXYS IXYS IXYS
Product Status Active Obsolete Active Active
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V 200 V 200 V 200 V
Current - Continuous Drain (Id) @ 25°C 58A (Tc) 58A (Tc) 50A (Tc) 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 40mOhm @ 29A, 10V 40mOhm @ 29A, 10V 40mOhm @ 29A, 10V 45mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 4mA 4V @ 4mA 4V @ 4mA 4V @ 4mA
Gate Charge (Qg) (Max) @ Vgs 220 nC @ 10 V 140 nC @ 10 V 140 nC @ 10 V 220 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 4400 pF @ 25 V 3600 pF @ 25 V 3600 pF @ 25 V 4400 pF @ 25 V
FET Feature - - - -
Power Dissipation (Max) 300W (Tc) 300W (Tc) 300W (Tc) 300W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Through Hole Surface Mount
Supplier Device Package TO-268AA TO-268AA ISOPLUS247™ TO-268AA
Package / Case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA TO-268-3, D³Pak (2 Leads + Tab), TO-268AA TO-247-3 TO-268-3, D³Pak (2 Leads + Tab), TO-268AA

Related Product By Categories

DMN2600UFB-7
DMN2600UFB-7
Diodes Incorporated
MOSFET N-CH 25V 1.3A 3DFN
TK100S04N1L,LQ
TK100S04N1L,LQ
Toshiba Semiconductor and Storage
MOSFET N-CH 40V 100A DPAK
DMP3020LSS-13
DMP3020LSS-13
Diodes Incorporated
MOSFET P-CH 30V 12A 8SOP
FDB2614
FDB2614
onsemi
MOSFET N-CH 200V 62A D2PAK
SQS405ENW-T1_GE3
SQS405ENW-T1_GE3
Vishay Siliconix
MOSFET P-CH 12V 16A PPAK1212-8
IPT60R125G7XTMA1
IPT60R125G7XTMA1
Infineon Technologies
MOSFET N-CH 650V 20A 8HSOF
IRF7464TRPBF
IRF7464TRPBF
Infineon Technologies
MOSFET N-CH 200V 1.2A 8SO
SSM4K27CTTPL3
SSM4K27CTTPL3
Toshiba Semiconductor and Storage
MOSFET N-CH 20V 500MA CST4
NVD5802NT4G
NVD5802NT4G
onsemi
MOSFET N-CH 40V 16.4A/101A DPAK
AUIRLR120N
AUIRLR120N
Infineon Technologies
MOSFET N-CH 100V 10A DPAK
IPD30N06S2L23ATMA1
IPD30N06S2L23ATMA1
Infineon Technologies
MOSFET N-CH 55V 30A TO252-3
IXFJ40N30Q
IXFJ40N30Q
IXYS
MOSFET N-CHANNEL 300V 40A TO268

Related Product By Brand

DSEI30-10A
DSEI30-10A
IXYS
DIODE GEN PURP 1KV 30A TO247AD
DHG10I600PA
DHG10I600PA
IXYS
DIODE GEN PURP 600V 10A TO220AC
MCO75-16IO1
MCO75-16IO1
IXYS
MOD THYRISTOR SGL 1600V SOT-227B
IXTP3N120
IXTP3N120
IXYS
MOSFET N-CH 1200V 3A TO220AB
IXFH15N100Q3
IXFH15N100Q3
IXYS
MOSFET N-CH 1000V 15A TO247AD
IXFX52N100X
IXFX52N100X
IXYS
MOSFET N-CH 1000V 52A PLUS247
IXGT32N170
IXGT32N170
IXYS
IGBT 1700V 75A 350W TO268
IXXH50N60B3
IXXH50N60B3
IXYS
IGBT 600V 120A 600W TO247
IXGH60N60C2
IXGH60N60C2
IXYS
IGBT 600V 75A 480W TO247AD
IXGR35N120D1
IXGR35N120D1
IXYS
IGBT 1200V ISOPLUS247
IXCP10M45
IXCP10M45
IXYS
IC CURRENT REGULATOR TO220AB
IXDD514SIA
IXDD514SIA
IXYS
IC GATE DRVR LOW-SIDE 8SOIC