IXFT50N85XHV
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IXYS IXFT50N85XHV

Manufacturer No:
IXFT50N85XHV
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXFT50N85XHV Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 850V 50A TO268
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):850 V
Current - Continuous Drain (Id) @ 25°C:50A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:105mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id:5.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs:152 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:4480 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):890W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-268HV (IXFT)
Package / Case:TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
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Similar Products

Part Number IXFT50N85XHV IXFT30N85XHV   IXFT40N85XHV  
Manufacturer IXYS IXYS IXYS
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 850 V 850 V 850 V
Current - Continuous Drain (Id) @ 25°C 50A (Tc) 30A (Tc) 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 105mOhm @ 500mA, 10V 220mOhm @ 500mA, 10V 145mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id 5.5V @ 4mA 5.5V @ 2.5mA 5.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs 152 nC @ 10 V 68 nC @ 10 V 98 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 4480 pF @ 25 V 2460 pF @ 25 V 3700 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 890W (Tc) 695W (Tc) 860W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package TO-268HV (IXFT) TO-268 (IXFT) TO-268HV (IXFT)
Package / Case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA TO-268-3, D³Pak (2 Leads + Tab), TO-268AA TO-268-3, D³Pak (2 Leads + Tab), TO-268AA

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