IXFT44N50P
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IXYS IXFT44N50P

Manufacturer No:
IXFT44N50P
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXFT44N50P Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 500V 44A TO268
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:44A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:140mOhm @ 22A, 10V
Vgs(th) (Max) @ Id:5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs:98 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:5440 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):658W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-268AA
Package / Case:TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
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Similar Products

Part Number IXFT44N50P IXFR44N50P  
Manufacturer IXYS IXYS
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V 500 V
Current - Continuous Drain (Id) @ 25°C 44A (Tc) 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 140mOhm @ 22A, 10V 150mOhm @ 22A, 10V
Vgs(th) (Max) @ Id 5V @ 4mA 5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs 98 nC @ 10 V 98 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 5440 pF @ 25 V 5440 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 658W (Tc) 208W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Through Hole
Supplier Device Package TO-268AA ISOPLUS247™
Package / Case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA TO-247-3

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