IXFT28N50Q
  • Share:

IXYS IXFT28N50Q

Manufacturer No:
IXFT28N50Q
Manufacturer:
IXYS
Package:
Box
Datasheet:
IXFT28N50Q Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 500V 28A TO268
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:28A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:200mOhm @ 14A, 10V
Vgs(th) (Max) @ Id:4.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs:94 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:3000 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):375W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-268AA
Package / Case:TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
0 Remaining View Similar

In Stock

-
47

Please send RFQ , we will respond immediately.

Similar Products

Part Number IXFT28N50Q IXFT21N50Q   IXFT24N50Q   IXFT26N50Q  
Manufacturer IXYS IXYS IXYS IXYS
Product Status Active Obsolete Active Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V 500 V 500 V 500 V
Current - Continuous Drain (Id) @ 25°C 28A (Tc) 21A (Tc) 24A (Tc) 26A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 200mOhm @ 14A, 10V 250mOhm @ 10.5A, 10V 230mOhm @ 12A, 10V 200mOhm @ 13A, 10V
Vgs(th) (Max) @ Id 4.5V @ 4mA 4.5V @ 4mA 4.5V @ 4mA 4.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs 94 nC @ 10 V 84 nC @ 10 V 95 nC @ 10 V 95 nC @ 10 V
Vgs (Max) ±30V ±30V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 3000 pF @ 25 V 3000 pF @ 25 V 3900 pF @ 25 V 3900 pF @ 25 V
FET Feature - - - -
Power Dissipation (Max) 375W (Tc) 280W (Tc) 300W (Tc) 300W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package TO-268AA TO-268AA TO-268AA TO-268AA
Package / Case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA TO-268-3, D³Pak (2 Leads + Tab), TO-268AA TO-268-3, D³Pak (2 Leads + Tab), TO-268AA TO-268-3, D³Pak (2 Leads + Tab), TO-268AA

Related Product By Categories

FQI5N30TU
FQI5N30TU
Fairchild Semiconductor
MOSFET N-CH 300V 5.4A I2PAK
SIR4606DP-T1-GE3
SIR4606DP-T1-GE3
Vishay Siliconix
N-CHANNEL 60 V (D-S) MOSFET POWE
SSM3J338R,LF
SSM3J338R,LF
Toshiba Semiconductor and Storage
MOSFET P-CH 12V 6A SOT23F
SIR466DP-T1-GE3
SIR466DP-T1-GE3
Vishay Siliconix
MOSFET N-CH 30V 40A PPAK SO-8
SPP18P06PHXKSA1
SPP18P06PHXKSA1
Infineon Technologies
MOSFET P-CH 60V 18.7A TO220-3
NVTYS010N04CLTWG
NVTYS010N04CLTWG
onsemi
T6 40V N-CH LL IN LFPAK33
AOD380A60
AOD380A60
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 600V 11A TO252
STP9NK65ZFP
STP9NK65ZFP
STMicroelectronics
MOSFET N-CH 650V 6.4A TO220FP
IRL2910STRRPBF
IRL2910STRRPBF
Infineon Technologies
MOSFET N-CH 100V 55A D2PAK
APT17F100S
APT17F100S
Microchip Technology
MOSFET N-CH 1000V 17A D3PAK
IRFR3706TRPBF
IRFR3706TRPBF
Infineon Technologies
MOSFET N-CH 20V 75A DPAK
NVMFS5C404NWFT1G
NVMFS5C404NWFT1G
onsemi
MOSFET N-CH 40V 53A/378A 5DFN

Related Product By Brand

MDD26-08N1B
MDD26-08N1B
IXYS
DIODE MODULE 800V 36A TO240AA
DH60-18A
DH60-18A
IXYS
DIODE GEN PURP 1.8KV 60A TO247AD
DNA30E2200PZ-TUB
DNA30E2200PZ-TUB
IXYS
POWER DIODE DISCRETES-RECTIFIER
IXFP76N15T2
IXFP76N15T2
IXYS
MOSFET N-CH 150V 76A TO220AB
IXFH20N100P
IXFH20N100P
IXYS
MOSFET N-CH 1000V 20A TO247AD
IXFX100N65X2
IXFX100N65X2
IXYS
MOSFET N-CH 650V 100A PLUS247-3
IXFN50N120SK
IXFN50N120SK
IXYS
SICFET N-CH 1200V 48A SOT227B
IXFP6N120P
IXFP6N120P
IXYS
MOSFET N-CH 1200V 6A TO220AB
IXFZ140N25T
IXFZ140N25T
IXYS
MOSFET N-CH 250V 100A DE475
IXTV230N085TS
IXTV230N085TS
IXYS
MOSFET N-CH 85V 230A PLUS-220SMD
IXFH30N60Q
IXFH30N60Q
IXYS
MOSFET N-CH 600V 30A TO247AD
IXDN402SI
IXDN402SI
IXYS
IC GATE DRVR LOW-SIDE 8SOIC